Vishay Siliconix Producten

SUP85N03-04P-E3

Vishay Siliconix

MOSFET N-CH 30V 85A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.75W (Ta), 166W (Tc)
• Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

package: TO-220-3

SUP60N10-16L-E3

Vishay Siliconix

MOSFET N-CH 100V 60A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

package: TO-220-3

SI2343DS-T1

Vishay Siliconix

MOSFET P-CH 30V 3.1A SOT23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 750mW (Ta)
• Rds On (Max) @ Id, Vgs: 53 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

SIB415DK-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 9A SC75-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.05nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
• Rds On (Max) @ Id, Vgs: 87 mOhm @ 4.17A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SC-75-6L Single
• Package / Case: PowerPAK? SC-75-6L

package: PowerPAK? SC-75-6L

SI5856DC-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 4.4A 1206-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 1206-8 ChipFET?
• Package / Case: 8-SMD, Flat Lead

package: 8-SMD, Flat Lead

IRFIBC20GPBF

Vishay Siliconix

MOSFET N-CH 600V 1.7A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3 Full Pack, Isolated Tab

package: TO-220-3 Full Pack, Isolated Tab

SI4090DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 19.7A 8SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

package: 8-SOIC (0.154", 3.90mm Width)

SI3407DV-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 8A 6-TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

package: SOT-23-6 Thin, TSOT-23-6

SIHP28N65EF-GE3

Vishay Siliconix

MOSFET N-CH 650V 28A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3249pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 117 mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

package: TO-220-3

IRFR110TRLPBF

Vishay Siliconix

MOSFET N-CH 100V 4.3A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 25W (Tc)
• Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFPE50PBF

Vishay Siliconix

MOSFET N-CH 800V 7.8A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 190W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

package: TO-247-3

IRFBE30SPBF

Vishay Siliconix

MOSFET N-CH 800V 4.1A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SI4816DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 5.3A 8-SOIC

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 1W, 1.25W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

package: 8-SOIC (0.154", 3.90mm Width)

SI6969DQ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 8TSSOP

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V
• Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 1.1W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP

package: 8-TSSOP (0.173", 4.40mm Width)

SIA913DJ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 4.5A SC70-6

• FET Type: 2 P-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 4.5A
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
• Power - Max: 6.5W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? SC-70-6 Dual
• Supplier Device Package: PowerPAK? SC-70-6 Dual

package: PowerPAK? SC-70-6 Dual

SI5933DC-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 2.7A 1206-8

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.7A
• Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 1.1W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: 1206-8 ChipFET?

package: 8-SMD, Flat Lead

SI4948BEY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 60V 2.4A 8-SOIC

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 2.4A
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 1.4W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

package: 8-SOIC (0.154", 3.90mm Width)

SI4904DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 40V 8A 8-SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 8A
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
• Power - Max: 3.25W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

package: 8-SOIC (0.154", 3.90mm Width)

SI9114ADY-T1-E3

Vishay Siliconix

IC REG CTRLR MULT TOP 14SOIC

• Output Type: Transistor Driver
• Function: Step-Up/Step-Down
• Output Configuration: Positive, Isolation Capable
• Topology: Flyback, Forward Converter
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 9.5 V ~ 16.5 V
• Frequency - Switching: 20kHz ~ 2MHz
• Duty Cycle (Max): 50%
• Synchronous Rectifier: No
• Clock Sync: Yes
• Serial Interfaces: -
• Control Features: Enable, Soft Start
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SOIC

package: 14-SOIC (0.154", 3.90mm Width)

SIP4282DVP-3-T1-E3

Vishay Siliconix

LOAD SW W/CONTROLLED SLEW RATE

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 1.8 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.4A
• Rds On (Typ): 105 mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Slew Rate Controlled
• Fault Protection: -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Package / Case: PowerPAK? SC-75-6L
• Supplier Device Package: PowerPAK? SC-75-6L Single

package: PowerPAK? SC-75-6L

SIC521CD-T1-GE3

Vishay Siliconix

IC CTLR STAGE 30A 5V PWM PPAK ML

• Output Configuration: Half Bridge
• Applications: Synchronous Buck Converters
• Interface: PWM
• Load Type: Inductive
• Technology: Power MOSFET
• Rds On (Typ): -
• Current - Output / Channel: 30A
• Current - Peak Output: 40A
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 4.5 V ~ 18 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit, Diode Emulation
• Fault Protection: UVLO
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? MLP4535-22L
• Supplier Device Package: POWERPAK? MLP4535-22L

package: PowerPAK? MLP4535-22L

DG408DY-E3

Vishay Siliconix

IC MUX CMOS ANG DUAL 8CH 16SOIC

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: 8:1
• Number of Circuits: 1
• On-State Resistance (Max): 100 Ohm
• Channel-to-Channel Matching (ΔRon): 15 Ohm (Max)
• Voltage - Supply, Single (V+): 12V
• Voltage - Supply, Dual (V±): ±5 V ~ 20 V
• Switch Time (Ton, Toff) (Max): 150ns, 150ns
• -3db Bandwidth: -
• Charge Injection: 20pC
• Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
• Current - Leakage (IS(off)) (Max): 500pA
• Crosstalk: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

package: 16-SOIC (0.154", 3.90mm Width)

SIC652CD-T1-GE3

Vishay Siliconix

IC POWER STAGE 55A MLP31-55

• Output Configuration: Half Bridge
• Applications: General Purpose
• Interface: Logic, PWM
• Load Type: Inductive, Capacitive, Resistive
• Technology: Power MOSFET
• Rds On (Typ): 3Ohm LS + HS
• Current - Output / Channel: 55A
• Current - Peak Output: 100A
• Voltage - Supply: 4.5V ~ 5.5V
• Voltage - Load: 24V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit, Diode Emulation
• Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® MLP55-31L
• Supplier Device Package: PowerPAK® MLP55-31L

package: PowerPAK® MLP55-31L

SIHP17N80AE-GE3

Vishay Siliconix

MOSFET N-CH 800V 15A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 179W (Tc)
• Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

package: -

SQJB70EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 100V 11.3A PPAK SO8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
• Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
• Power - Max: 27W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8 Dual
• Supplier Device Package: PowerPAK® SO-8 Dual

package: -

SIHFPS40N60K-GE3

Vishay Siliconix

POWER MOSFET SUPER-247, 130 M @

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7970 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 570W (Tc)
• Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: SUPER-247™ (TO-274AA)
• Package / Case: TO-274AA

package: -

SIR800ADP-T1-RE3

Vishay Siliconix

MOSFET N-CH 20V 50.2A/177A PPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
• Vgs (Max): +12V, -8V
• FET Feature: -
• Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
• Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

package: -

SIRA60DP-T1-RE3

Vishay Siliconix

MOSFET N-CH 30V 100A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 15 V
• Vgs (Max): +20V, -16V
• FET Feature: -
• Power Dissipation (Max): 57W (Tc)
• Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

package: -

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SUM70030E-GE3

Vishay Siliconix

MOSFET N-CH 100V 150A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 2.88mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

package: -

SUM50010E-GE3

Vishay Siliconix

MOSFET N-CH 60V 150A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 1.75mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

package: -