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NGTB30N120IHSWG

NGTB30N120IHSWG

NGTB30N120IHSWG

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Onderdeelnummer NGTB30N120IHSWG
Fabrikant ON Semiconductor
Omschrijving IGBT 1200V 30A TO247
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NGTB30N120IHSWG Gegevensblad

package TO-247-3
ECAD
In voorraad 5.088 piece(s)
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Geschatte Leveringstijd dec 22 - dec 27 (Kies voor snelle verzending)
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NGTB30N120IHSWG-specificaties

FabrikantON Semiconductor
CategorieDiscrete halfgeleiderproducten - Transistors - IGBT's - Single
packageTO-247-3
ECAD
Serie-
IGBT-typeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200V
Stroom - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)200A
Vce (aan) (Max) @ Vge, Ic2.4V @ 15V, 30A
Vermogen - Max192W
Energie overschakelen1mJ (off)
Input TypeStandard
Gate Charge220nC
Td (aan / uit) @ 25 ° C-/210ns
Test conditie600V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr)-
Bedrijfstemperatuur-55°C ~ 150°C (TJ)
Montage typeThrough Hole
Pakket / kofferTO-247-3
Apparaatpakket leverancierTO-247

NGTB30N120IHSWG datasheet

NGTB30N120IHSWG Packaging

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NGTB30N120IHSWG garanties

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Onderdeelnummer Fabrikant Omschrijving Voorraad

NGTB30N120IHSWG

D# NGTB30N120IHSWG

ON Semiconductor

Trans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: NGTB30N120IHSWG)

0
Onderdeelnummer Fabrikant Omschrijving Voorraad

NGTB30N120IHSWG

ON Semiconductor

IGBT, 1200V, 30A, TO-247-3

35
Onderdeelnummer Fabrikant Omschrijving Voorraad

NGTB30N120IHSWG

D# 2156-NGTB30N120IHSWG-ON-ND

Rochester Electronics LLC

IGBT, 60A, 1200V, N-CHANNEL

6948
Onderdeelnummer Fabrikant Omschrijving Voorraad

NGTB30N120IHSWG

Rochester Electronics LLC

OEM/CM QUOTES ONLY | NO BROKERS

8060
Onderdeelnummer Fabrikant Omschrijving Voorraad

NGTB30N120IHSWG

ON Semiconductor

Insulated Gate Bipolar Transistor, 60A, 1200V, N-Channel

RoHS: Compliant
6948

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