Pagina 5 - Diodes Incorporated Producten - Transistors - FET's, MOSFET's - Arrays | Heisener Electronics
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Diodes Incorporated Producten - Transistors - FET's, MOSFET's - Arrays

Archief 842
Pagina  5/29
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2N7002DW-7-G
Diodes Incorporated

MOSFET 2N-CH 60V SOT-363

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMN4027SSDQ-13
Diodes Incorporated

MOSFET 2N-CH 40V 5.4A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Request a Quote
-
40V
5.4A (Ta)
27mOhm @ 7A, 10V
3V @ 250µA
12.9nC @ 10V
604pF @ 20V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMT4031LSD-13
Diodes Incorporated

MOSFET 2N-CH 40V 6.3A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 362pF @ 20V
  • Power - Max: 1.2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: -
Request a Quote
-
40V
6.3A (Ta)
23mOhm @ 6A, 10V
2.5V @ 250µA
7nC @ 10V
362pF @ 20V
1.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMC2710UVT-13
Diodes Incorporated

MOSFET N/P-CH 20V 1.2A TSOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 900mA (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-23-6
package: -
Request a Quote
-
20V
1.2A (Ta), 900mA (Ta)
400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
1V @ 250µA
0.6nC @ 4.5V, 0.7nC @ 4.5V
42pF @ 16V, 49pF @ 16V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-23-6
DMN2016UFX-7
Diodes Incorporated

MOSFET 2N-CH 24V 9.9A 4VDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
  • Power - Max: 1.07W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-VFDFN Exposed Pad
  • Supplier Device Package: V-DFN2050-4
package: -
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-
24V
9.9A (Ta)
15mOhm @ 6.5A, 4.5V
1.5V @ 250µA
14nC @ 4.5V
950pF @ 10V
1.07W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
4-VFDFN Exposed Pad
V-DFN2050-4
DMTH6015LPDWQ-13
Diodes Incorporated

MOSFET 2N-CH 60V 9.4A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
  • Power - Max: 2.6W (Ta), 39.5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
package: -
Voorraad7.500
-
60V
9.4A (Ta), 36.3A (Tc)
20mOhm @ 10A, 10V
2.5V @ 250µA
14.3nC @ 10V
825pF @ 30V
2.6W (Ta), 39.5W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
BSS8402DW-7-G
Diodes Incorporated

MOSFET N/P-CH 60V/50V SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V, 50V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Ta), 130mA (Ta)
  • Rds On (Max) @ Id, Vgs: 13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 45pF @ 25V
  • Power - Max: 200mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Request a Quote
-
60V, 50V
115mA (Ta), 130mA (Ta)
13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
2.5V @ 250µA, 2V @ 1mA
-
50pF @ 25V, 45pF @ 25V
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMN3003LCA8-7
Diodes Incorporated

MOSFET 2N-CH 30V 25A X2-TSN6025

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3722pF @ 15V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, No Lead
  • Supplier Device Package: X2-TSN6025-8
package: -
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-
30V
25A (Ta)
2.6mOhm @ 10A, 10V
2.2V @ 1mA
45.5nC @ 4.5V
3722pF @ 15V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, No Lead
X2-TSN6025-8
DMN32D0LVQ-13
Diodes Incorporated

MOSFET 2N-CH 30V 0.68A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
  • Power - Max: 480mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
Request a Quote
-
30V
680mA (Ta)
1.2Ohm @ 100mA, 4V
1.2V @ 250µA
0.62nC @ 4.5V
44.8pF @ 15V
480mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMP22D5UDJ
Diodes Incorporated

MOSFET 2P-CH 20V 0.36A SOT963

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 15V
  • Power - Max: 380mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
package: -
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-
20V
360mA (Ta)
1.9Ohm @ 100mA, 4.5V
1V @ 250µA
0.3nC @ 4.5V
17pF @ 15V
380mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
DMN10H6D2LFDB-13
Diodes Incorporated

MOSFET 2N-CH 100V 0.27A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
  • Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
package: -
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-
100V
270mA (Ta)
6Ohm @ 190mA, 10V
2V @ 1mA
1.2nC @ 10V
41pF @ 50V
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMP58D1LVQ-7
Diodes Incorporated

MOSFET 2P-CH 50V 0.22A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
  • Power - Max: 490mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
Request a Quote
-
50V
220mA (Ta)
8Ohm @ 100mA, 5V
2V @ 250µA
1.2nC @ 10V
37pF @ 25V
490mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMT6011LPDW-13
Diodes Incorporated

MOSFET 2N-CH 60V 10.3A POWERDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1072pF @ 30V
  • Power - Max: 2.5W (Ta), 37.9W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
package: -
Request a Quote
-
60V
10.3A (Ta), 40A (Tc)
14mOhm @ 10A, 10V
2.5V @ 250µA
22.2nC @ 10V
1072pF @ 30V
2.5W (Ta), 37.9W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
DMTH8030LPDWQ-13
Diodes Incorporated

MOSFET 2N-CH 80V 28.5A POWERDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 28.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 631pF @ 40V
  • Power - Max: 3.1W (Ta), 41W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
package: -
Voorraad7.500
-
80V
28.5A (Tc)
26mOhm @ 10A, 10V
2.5V @ 250µA
10.4nC @ 10V
631pF @ 40V
3.1W (Ta), 41W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
DMN2004VK-7B
Diodes Incorporated

MOSFET 2N-CH 20V 0.54A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 250mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
Voorraad24.000
-
20V
540mA (Ta)
550mOhm @ 540mA, 4.5V
1V @ 250µA
-
150pF @ 16V
250mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMC2400UVQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT563 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta), 700mA (Ta)
  • Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V, 970mOhm @ 100mA, 5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V, 46.1pF @ 10V
  • Power - Max: 450mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
Request a Quote
-
20V
1.03A (Ta), 700mA (Ta)
480mOhm @ 200mA, 5V, 970mOhm @ 100mA, 5V
900mV @ 250µA, 1V @ 250µA
0.5nC @ 4.5V
37.1pF @ 10V, 46.1pF @ 10V
450mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMN3061SVT-13
Diodes Incorporated

MOSFET 2N-CH 30V 3.4A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V
  • Power - Max: 880mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
package: -
Request a Quote
-
30V
3.4A (Ta)
60mOhm @ 3.1A, 10V
1.8V @ 250µA
6.6nC @ 10V
278pF @ 15V
880mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMP2900UVQ-7
Diodes Incorporated

MOSFET 2P-CH 20V 0.85A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
Voorraad5.565
-
20V
850mA (Ta)
750mOhm @ 430mA, 4.5V
1V @ 250µA
0.7nC @ 4.5V
49pF @ 16V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMPH6050SPDWQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 26A (Tc)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UX)
package: -
Request a Quote
-
60V
6.3A (Ta), 26A (Tc)
48mOhm @ 5A, 10V
3V @ 250µA
30.6nC @ 10V
1525pF @ 30V
1.5W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerTDFN
PowerDI5060-8 (Type UX)
DMN62D4LDW-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.261A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 261mA (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
  • Power - Max: 330mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Request a Quote
-
60V
261mA (Ta)
3Ohm @ 200mA, 10V
2V @ 250µA
1.04nC @ 10V
41pF @ 30V
330mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMN3061SVTQ-7
Diodes Incorporated

MOSFET 2N-CH 30V 3.4A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V
  • Power - Max: 880mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
package: -
Voorraad8.358
-
30V
3.4A (Ta)
60mOhm @ 3.1A, 10V
1.8V @ 250µA
6.6nC @ 10V
278pF @ 15V
880mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMP2900UV-13
Diodes Incorporated

MOSFET 2P-CH 20V 0.85A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
Request a Quote
-
20V
850mA (Ta)
750mOhm @ 430mA, 4.5V
1V @ 250µA
0.7nC @ 4.5V
49pF @ 16V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMN15M3UCA6-7
Diodes Incorporated

MOSFET 2N-CH 14V X3-DSN2718-6

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 14V
  • Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 5.8mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X3-DSN2718-6
package: -
Request a Quote
-
14V
16.5A (Ta)
5.8mOhm @ 3A, 4.5V
1.3V @ 1mA
35.2nC @ 4.5V
2360pF @ 6V
1W
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
X3-DSN2718-6
DMC10H172SSD-13
Diodes Incorporated

MOSFET N/P-CH 100V 2A/1.7A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V, 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 50V, 1030pF @ 50V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: -
Request a Quote
-
100V
2A (Ta), 1.7A (Ta)
160mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V
3V @ 250µA
19.6nC @ 10V, 18nC @ 10V
1145pF @ 50V, 1030pF @ 50V
1.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BSS138DW-7-F-79
Diodes Incorporated

MOSFET 2N-CH 50V 0.2A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 200mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Request a Quote
-
50V
200mA (Ta)
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
-
50pF @ 10V
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMC10H220LSD-13
Diodes Incorporated

MOSFET N/P-CH 100V 1.7A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V, 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 50V, 1030pF @ 50V
  • Power - Max: 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: -
Request a Quote
-
100V
1.7A (Ta)
220mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V
3V @ 250µA
8.3nC @ 10V, 17.5nC @ 10V
340pF @ 50V, 1030pF @ 50V
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMN2053UVT-7
Diodes Incorporated

MOSFET 2N-CH 20V 4.6A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
package: -
Voorraad18.297
-
20V
4.6A (Ta)
35mOhm @ 5A, 4.5V
1V @ 250µA
3.6nC @ 4.5V
369pF @ 10V
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMTH4008LPDWQ-13
Diodes Incorporated

MOSFET 2N-CH 40V 10A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
  • Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
  • Power - Max: 2.67W (Ta), 39.4W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
package: -
Voorraad27.990
-
40V
10A (Ta), 46.2A (Tc)
12.3mOhm @ 20A, 10V
2.3V @ 250µA
12.3nC @ 10V
881pF @ 20V
2.67W (Ta), 39.4W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
DI9945T
Diodes Incorporated

MOSFET 2N-CH 60V 3.5A 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Request a Quote
-
60V
3.5A
100mOhm @ 3.5A, 10V
-
30nC @ 10V
435pF @ 25V
2W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMC2710UDW-7
Diodes Incorporated

MOSFET N/P-CH 20V 0.75A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
  • Power - Max: 290mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Voorraad7.758
-
20V
750mA (Ta), 600mA (Ta)
450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
1V @ 250µA
0.6nC @ 4.5V, 0.7nC @ 4.5V
42pF @ 16V, 49pF @ 16V
290mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363