Pagina 3 - Transistoren - Bipolair (BJT) - RF | Discrete halfgeleiderproducten | Heisener Electronics
Contacteer ons
SalesDept@heisener.com +86-755-83210559 ext. 887
Language Translation

* Please refer to the English Version as our Official Version.

Transistoren - Bipolair (BJT) - RF

Archief 1.633
Pagina  3/59
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFR 705L3RH E6327
Infineon Technologies

TRANS RF BIPO NPN 10MA TSLP-3-9

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 39GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
  • Gain: 25dB
  • Power - Max: 40mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 10mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
package: SC-101, SOT-883
Voorraad6.400
4.7V
39GHz
0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
25dB
40mW
160 @ 7mA, 3V
10mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
BFP450E6327BTSA1
Infineon Technologies

TRANS NPN RF 4.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 24GHz
  • Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
  • Gain: 15.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
package: SC-82A, SOT-343
Voorraad5.216
5V
24GHz
1.25dB @ 1.8GHz
15.5dB
450mW
60 @ 50mA, 4V
100mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
hot MRF5812R1
Microsemi Corporation

TRANS NPN 15V 200MA SO8

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
  • Gain: 13dB ~ 15.5dB
  • Power - Max: 1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad306.096
15V
5GHz
2dB ~ 3dB @ 500MHz
13dB ~ 15.5dB
1.25W
50 @ 50mA, 5V
200mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
UTV200
Microsemi Corporation

TRANS RF BIPO 80W 4.5A 55JV2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 28V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB ~ 9.5dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 4.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55JV
  • Supplier Device Package: 55JV
package: 55JV
Voorraad7.616
28V
470MHz ~ 860MHz
-
8.5dB ~ 9.5dB
80W
10 @ 1A, 5V
4.5A
200°C (TJ)
Chassis Mount
55JV
55JV
MS1051
Microsemi Corporation

TRANS RF BIPO 290W 20A M174

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB ~ 13dB
  • Power - Max: 290W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M174
  • Supplier Device Package: M174
package: M174
Voorraad6.624
18V
30MHz
-
11dB ~ 13dB
290W
10 @ 5mA, 5V
20A
200°C (TJ)
Chassis Mount
M174
M174
NE85633-T1B-R24-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
package: TO-236-3, SC-59, SOT-23-3
Voorraad2.032
12V
7GHz
1.1dB @ 1GHz
11.5dB
200mW
80 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
NE681M03-T1-A
CEL

TRANSISTOR NPN 1GHZ M03

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2.7dB @ 1GHz
  • Gain: -
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-623F
  • Supplier Device Package: M03
package: SOT-623F
Voorraad5.264
10V
7GHz
1.4dB ~ 2.7dB @ 1GHz
-
125mW
80 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
SOT-623F
M03
hot MPS5179
Fairchild/ON Semiconductor

TRANSISTOR RF NPN TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): 5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad62.244
12V
2GHz
5dB @ 200MHz
15dB
350mW
25 @ 3mA, 1V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
SD1731
STMicroelectronics

TRANSISTOR NPN RF HF SSB M174

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 13dB
  • Power - Max: 233W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 6V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: M174
  • Supplier Device Package: M174
package: M174
Voorraad3.376
55V
-
-
13dB
233W
15 @ 10A, 6V
20A
200°C (TJ)
Surface Mount
M174
M174
BFG480W,115
NXP

TRANS NPN 4.5V 21GHZ SOT343R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 21GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
  • Gain: 16dB
  • Power - Max: 360mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 80mA, 2V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
package: SC-82A, SOT-343
Voorraad2.720
4.5V
21GHz
1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
16dB
360mW
40 @ 80mA, 2V
250mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
CMPAK-4
PH3135-20M
M/A-Com Technology Solutions

TRANSISTOR 20W 36V 3.10-3.50GHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.5dB
  • Power - Max: 20W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 2.4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad5.440
65V
-
-
7.5dB
20W
-
2.4A
200°C (TJ)
-
-
-
SD1444
Microsemi Corporation

TRANS RF BIPO 5W 400MA TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 450MHz ~ 512MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
package: TO-205AD, TO-39-3 Metal Can
Voorraad5.168
16V
450MHz ~ 512MHz
-
8dB
5W
20 @ 50mA, 5V
400mA
200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
NE68139-T1-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 13.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
package: TO-253-4, TO-253AA
Voorraad7.072
10V
9GHz
1.2dB @ 1GHz
13.5dB
200mW
50 @ 20mA, 8V
65mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
15GN01MA-TL-E
ON Semiconductor

TRANS NPN BIPO 50MA 8V MCP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Gull Wing
  • Supplier Device Package: 3-MCP
package: 3-SMD, Gull Wing
Voorraad2.592
8V
1.5GHz
-
-
400mW
200 @ 10mA, 5V
50mA
150°C (TJ)
Surface Mount
3-SMD, Gull Wing
3-MCP
MRF10005
M/A-Com Technology Solutions

TRANS 5W 960MHZ-1215MHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB ~ 10.3dB
  • Power - Max: 25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 1.25mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 336E-02
  • Supplier Device Package: 336E-02, Style 1
package: 336E-02
Voorraad6.024
55V
-
-
8.5dB ~ 10.3dB
25W
20 @ 500mA, 5V
1.25mA
200°C (TJ)
Chassis Mount
336E-02
336E-02, Style 1
NE68039R-T1
CEL

TRANS NPN 2GHZ SOT-143R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.7dB ~ 2.6dB @ 2GHz ~ 4GHz
  • Gain: 6.5dB ~ 11dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
package: SOT-143R
Voorraad29.646
10V
10GHz
1.7dB ~ 2.6dB @ 2GHz ~ 4GHz
6.5dB ~ 11dB
200mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
SOT-143R
SOT-143R
DSC5G0200L
Panasonic Electronic Components

TRANS RF NPN 20V 15MA SMINI3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
  • Gain: 24dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2-B
package: SC-85
Voorraad3.136
20V
650MHz
3.3dB @ 100MHz
24dB
150mW
65 @ 1mA, 6V
15mA
150°C (TJ)
Surface Mount
SC-85
SMini3-F2-B
2SC5087-O(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SMQ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.1dB @ 500MHz ~ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-61AA
  • Supplier Device Package: SMQ
package: SC-61AA
Voorraad28.542
12V
7GHz
1dB ~ 1.1dB @ 500MHz ~ 1GHz
-
150mW
80 @ 20mA, 10V
80mA
125°C (TJ)
Surface Mount
SC-61AA
SMQ
2SC27780CL
Panasonic Electronic Components

TRANS NPN 20VCEO 30MA MINI-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 230MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
package: TO-236-3, SC-59, SOT-23-3
Voorraad25.506
20V
230MHz
-
-
200mW
110 @ 1mA, 10V
30mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G1
hot 2SC4713KT146S
Rohm Semiconductor

TRANS NPN 6V 50MA SOT-346

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3
package: TO-236-3, SC-59, SOT-23-3
Voorraad215.760
6V
800MHz
-
-
200mW
180 @ 5mA, 5V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3
BFP620H7764XTSA1
Infineon Technologies

TRANS RF NPN 2.3V 80MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 65GHz
  • Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
  • Gain: 21.5dB
  • Power - Max: 185mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
package: SC-82A, SOT-343
Voorraad51.504
2.8V
65GHz
0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
21.5dB
185mW
110 @ 50mA, 1.5V
80mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP650FH6327XTSA1
Infineon Technologies

TRANS RF NPN 42GHZ 4.5V 4TSFP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 42GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
  • Gain: 11dB ~ 21.5dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
package: 4-SMD, Flat Leads
Voorraad53.592
4.5V
42GHz
0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
11dB ~ 21.5dB
500mW
110 @ 80mA, 3V
150mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
MRF448A
MACOM Technology Solutions

TRANSISTOR,<30MHZ,50V,250W

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 14dB
  • Power - Max: 290W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5A, 10V
  • Current - Collector (Ic) (Max): 16A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 211-11, Style 2
  • Supplier Device Package: 211-11, Style 2
package: -
Request a Quote
50V
-
-
14dB
290W
25 @ 5A, 10V
16A
-
Chassis Mount
211-11, Style 2
211-11, Style 2
MSC1175MA
Microsemi Corporation

RF TRANS NPN 65V 1.15GHZ M218

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 400W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 12A
  • Operating Temperature: 250°C
  • Mounting Type: Chassis Mount
  • Package / Case: M218
  • Supplier Device Package: M218
package: -
Request a Quote
65V
1.025GHz ~ 1.15GHz
-
8dB
400W
15 @ 1A, 5V
12A
250°C
Chassis Mount
M218
M218
2SA1575E-TD-E
Sanyo

PNP DARLINGTON TRANSISTOR

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Frequency - Transition: 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PCP
package: -
Request a Quote
200V
400MHz
-
-
500mW
40 @ 10mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-243AA
PCP
ON5088-115
NXP

RF TRANS NPN 10V 55GHZ 4DFP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 55GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 12GHz
  • Gain: 13dB
  • Power - Max: 136mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
package: -
Voorraad5.277
10V
55GHz
1.1dB @ 12GHz
13dB
136mW
160 @ 10mA, 2V
40mA
150°C (TJ)
Surface Mount
SOT-343F
4-DFP
4MN10CH-TL-E
onsemi

BIP NPN 0.1A 200V

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Frequency - Transition: 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 600mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-96
  • Supplier Device Package: 3-CPH
package: -
Request a Quote
200V
400MHz
-
-
600mW
60 @ 10mA, 10V
100mA
-
Surface Mount
SC-96
3-CPH
2SC4784YA-TR-E
Renesas Electronics Corporation

RF 0.02A, NPN

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-