Pagina 4 - IXYS Producten - Transistors - FET's, MOSFET's - Single | Heisener Electronics
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IXYS Producten - Transistors - FET's, MOSFET's - Single

Archief 2.016
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Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IXFK180N10
IXYS

MOSFET N-CH 100V 180A TO-264AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 560W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
package: TO-264-3, TO-264AA
Voorraad6.060
MOSFET (Metal Oxide)
100V
180A (Tc)
10V
4V @ 8mA
390nC @ 10V
10900pF @ 25V
±20V
-
560W (Tc)
8 mOhm @ 90A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
IXFN180N25T
IXYS

MOSFET N-CH 250V 168A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 168A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 345nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 900W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
package: SOT-227-4, miniBLOC
Voorraad7.760
MOSFET (Metal Oxide)
250V
168A
10V
5V @ 8mA
345nC @ 10V
28000pF @ 25V
±20V
-
900W (Tc)
12.9 mOhm @ 60A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
hot IXFK90N20
IXYS

MOSFET N-CH 200V 90A TO-264AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 45A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
package: TO-264-3, TO-264AA
Voorraad4.752
MOSFET (Metal Oxide)
200V
90A (Tc)
10V
4V @ 8mA
380nC @ 10V
9000pF @ 25V
±20V
-
500W (Tc)
23 mOhm @ 45A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
IXTX90P20P
IXYS

MOSFET P-CH 200V 90A PLUS247

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 890W (Tc)
  • Rds On (Max) @ Id, Vgs: 44 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad5.984
MOSFET (Metal Oxide)
200V
90A (Tc)
10V
4V @ 1mA
205nC @ 10V
12000pF @ 25V
±20V
-
890W (Tc)
44 mOhm @ 22A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS247?-3
TO-247-3
IXTX40P50P
IXYS

MOSFET P-CH 500V 40A PLUS247

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 890W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad6.312
MOSFET (Metal Oxide)
500V
40A (Tc)
10V
4V @ 1mA
205nC @ 10V
11500pF @ 25V
±20V
-
890W (Tc)
230 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS247?-3
TO-247-3
hot IXFK110N07
IXYS

MOSFET N-CH 70V 110A TO-264AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 70V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 55A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
package: TO-264-3, TO-264AA
Voorraad103.464
MOSFET (Metal Oxide)
70V
110A (Tc)
10V
4V @ 8mA
480nC @ 10V
9000pF @ 25V
±20V
-
500W (Tc)
6 mOhm @ 55A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
IXFK80N60P3
IXYS

MOSFET N-CH 600V 80A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1300W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
package: TO-264-3, TO-264AA
Voorraad8.964
MOSFET (Metal Oxide)
600V
80A (Tc)
10V
5V @ 8mA
190nC @ 10V
13100pF @ 25V
±30V
-
1300W (Tc)
70 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
IXFX98N50P3
IXYS

MOSFET N-CH 500V 98A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1300W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad7.776
MOSFET (Metal Oxide)
500V
98A (Tc)
10V
5V @ 8mA
197nC @ 10V
13100pF @ 25V
±30V
-
1300W (Tc)
50 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS247?-3
TO-247-3
IXTH02N250
IXYS

MOSFET N-CH 2500V 0.2A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 2500V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 116pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 Ohm @ 50mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad7.648
MOSFET (Metal Oxide)
2500V
200mA (Tc)
10V
4.5V @ 250µA
7.4nC @ 10V
116pF @ 25V
±20V
-
83W (Tc)
450 Ohm @ 50mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
IXFH15N100Q3
IXYS

MOSFET N-CH 1000V 15A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 690W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad19.104
MOSFET (Metal Oxide)
1000V
15A (Tc)
10V
6.5V @ 4mA
64nC @ 10V
3250pF @ 25V
±30V
-
690W (Tc)
1.05 Ohm @ 7.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
hot IXFK170N20T
IXYS

MOSFET N-CH 200V 170A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1150W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
package: TO-264-3, TO-264AA
Voorraad6.384
MOSFET (Metal Oxide)
200V
170A (Tc)
10V
5V @ 4mA
265nC @ 10V
19600pF @ 25V
±20V
-
1150W (Tc)
11 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
hot IXTH7P50
IXYS

MOSFET P-CH 500V 7A TO-247AD

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad3.600
MOSFET (Metal Oxide)
500V
7A (Tc)
10V
5V @ 250µA
130nC @ 10V
3400pF @ 25V
±20V
-
180W (Tc)
1.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
IXTT16N20D2
IXYS

MOSFET N-CH 200V 16A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 208nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 695W (Tc)
  • Rds On (Max) @ Id, Vgs: 73 mOhm @ 8A, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Voorraad6.720
MOSFET (Metal Oxide)
200V
16A (Tc)
-
-
208nC @ 5V
5500pF @ 25V
±20V
Depletion Mode
695W (Tc)
73 mOhm @ 8A, 0V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT48P20P
IXYS

MOSFET P-CH 200V 48A TO-268

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 462W (Tc)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Voorraad8.220
MOSFET (Metal Oxide)
200V
48A (Tc)
10V
4.5V @ 250µA
103nC @ 10V
5400pF @ 25V
±20V
-
462W (Tc)
85 mOhm @ 24A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT90P10P
IXYS

MOSFET P-CH 100V 90A TO-268

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 462W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 45A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Voorraad8.196
MOSFET (Metal Oxide)
100V
90A (Tc)
10V
4V @ 250µA
120nC @ 10V
5800pF @ 25V
±20V
-
462W (Tc)
25 mOhm @ 45A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
hot IXFH26N50
IXYS

MOSFET N-CH 500V 26A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad10.284
MOSFET (Metal Oxide)
500V
26A (Tc)
10V
4V @ 4mA
160nC @ 10V
4200pF @ 25V
±20V
-
300W (Tc)
200 mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
hot IXFH50N20
IXYS

MOSFET N-CH 200V 50A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad61.908
MOSFET (Metal Oxide)
200V
50A (Tc)
10V
4V @ 4mA
220nC @ 10V
4400pF @ 25V
±20V
-
300W (Tc)
45 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
hot IXFH44N50P
IXYS

MOSFET N-CH 500V 44A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5440pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 658W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad103.596
MOSFET (Metal Oxide)
500V
44A (Tc)
10V
5V @ 4mA
98nC @ 10V
5440pF @ 25V
±30V
-
658W (Tc)
140 mOhm @ 22A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
hot IXFH36N60P
IXYS

MOSFET N-CH 600V 36A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 650W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad390.276
MOSFET (Metal Oxide)
600V
36A (Tc)
10V
5V @ 4mA
102nC @ 10V
5800pF @ 25V
±30V
-
650W (Tc)
190 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
IXTH10P60
IXYS

MOSFET P-CH 600V 10A TO-247AD

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad5.776
MOSFET (Metal Oxide)
600V
10A (Tc)
10V
5V @ 250µA
160nC @ 10V
4700pF @ 25V
±20V
-
300W (Tc)
1 Ohm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
hot IXFH6N100
IXYS

MOSFET N-CH 1KV 6A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad6.256
MOSFET (Metal Oxide)
1000V
6A (Tc)
10V
4.5V @ 2.5mA
130nC @ 10V
2600pF @ 25V
±20V
-
180W (Tc)
2 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
hot IXTH20P50P
IXYS

MOSFET P-CH 500V 20A TO-247

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 460W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad14.988
MOSFET (Metal Oxide)
500V
20A (Tc)
10V
4V @ 250µA
103nC @ 10V
5120pF @ 25V
±20V
-
460W (Tc)
450 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
IXFA6N120P
IXYS

MOSFET N-CH 1200V 6A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXFA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad8.220
MOSFET (Metal Oxide)
1200V
6A (Tc)
10V
5V @ 1mA
92nC @ 10V
2830pF @ 25V
±30V
-
250W (Tc)
2.4 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (IXFA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFQ60N50P3
IXYS

MOSFET N-CH 500V 60A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1040W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
package: TO-3P-3, SC-65-3
Voorraad6.848
MOSFET (Metal Oxide)
500V
60A (Tc)
10V
5V @ 4mA
96nC @ 10V
6250pF @ 25V
±30V
-
1040W (Tc)
100 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
IXFA4N100Q
IXYS

MOSFET N-CH 1000V 4A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXFA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad6.936
MOSFET (Metal Oxide)
1000V
4A (Tc)
10V
4.5V @ 1.5mA
39nC @ 10V
1050pF @ 25V
±20V
-
150W (Tc)
3 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (IXFA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTH110N25T
IXYS

MOSFET N-CH 250V 110A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 157nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 694W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 55A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad6.048
MOSFET (Metal Oxide)
250V
110A (Tc)
10V
4.5V @ 1mA
157nC @ 10V
9400pF @ 25V
±20V
-
694W (Tc)
24 mOhm @ 55A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
IXFA3N120
IXYS

MOSFET N-CH 1200V 3A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXFA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad7.648
MOSFET (Metal Oxide)
1200V
3A (Tc)
10V
5V @ 1.5mA
39nC @ 10V
1050pF @ 25V
±20V
-
200W (Tc)
4.5 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (IXFA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTH8P50
IXYS

MOSFET P-CH 500V 8A TO-247

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad5.728
MOSFET (Metal Oxide)
500V
8A (Tc)
10V
5V @ 250µA
130nC @ 10V
3400pF @ 25V
±20V
-
180W (Tc)
1.2 Ohm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
hot IXTH26P20P
IXYS

MOSFET P-CH 200V 26A TO-247

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 170 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad6.288
MOSFET (Metal Oxide)
200V
26A (Tc)
10V
4V @ 250µA
56nC @ 10V
2740pF @ 25V
±20V
-
300W (Tc)
170 mOhm @ 13A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
hot IXFH26N50P
IXYS

MOSFET N-CH 500V 26A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad12.984
MOSFET (Metal Oxide)
500V
26A (Tc)
10V
5.5V @ 4mA
60nC @ 10V
3600pF @ 25V
±30V
-
400W (Tc)
230 mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3