Pagina 6 - Microsemi Corporation Producten - Transistoren - Bipolair (BJT) - RF

Onderdeelnummer	Fabrikant	Omschrijving	package	Voorraad	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2729-125	Microsemi Corporation	TRANS RF BIPO 350W 15A 55KS1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 2.7GHz ~ 2.9GHz Noise Figure (dB Typ @ f): - Gain: 9dB ~ 9.5dB Power - Max: 350W DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 600mA, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KS-1 Supplier Device Package: 55KS-1	package: 55KS-1	Voorraad5.008	65V	2.7GHz ~ 2.9GHz	-	9dB ~ 9.5dB	350W	18 @ 600mA, 5V	15A	200°C (TJ)	Chassis Mount	55KS-1	55KS-1
MDS400	Microsemi Corporation	TRANS RF BIPO 1450W 40A 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 6.5dB Power - Max: 1450W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 40A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	package: 55KT	Voorraad6.224	55V	1.03GHz ~ 1.09GHz	-	6.5dB	1450W	10 @ 1A, 5V	40A	200°C (TJ)	Chassis Mount	55KT	55KT
MS2267	Microsemi Corporation	TRANS RF BIPO 575W 20A M214 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 8.7dB Power - Max: 575W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M214 Supplier Device Package: M214	package: M214	Voorraad4.592	60V	960MHz ~ 1.215GHz	-	8dB ~ 8.7dB	575W	10 @ 1A, 5V	20A	250°C (TJ)	Chassis Mount	M214	M214
TAN300	Microsemi Corporation	TRANS RF BIPO 65V 20A 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 6.6dB Power - Max: 1166W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1mA, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	package: 55KT	Voorraad3.744	65V	960MHz ~ 1.215GHz	-	6.6dB	1166W	10 @ 1mA, 5V	20A	200°C (TJ)	Chassis Mount	55KT	55KT
UMIL100A	Microsemi Corporation	TRANS RF BIPO 270W 20A 55JU2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 31V Frequency - Transition: 225MHz ~ 400MHz Noise Figure (dB Typ @ f): - Gain: 7.2dB ~ 8.5dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 55JU Supplier Device Package: 55JU	package: 55JU	Voorraad2.752	31V	225MHz ~ 400MHz	-	7.2dB ~ 8.5dB	270W	10 @ 1A, 5V	20A	150°C (TJ)	Chassis Mount	55JU	55JU
JTDB25	Microsemi Corporation	TRANSISTOR BIPO 55AW-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7.5dB Power - Max: 97W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW-1 Supplier Device Package: 55AW-1	package: 55AW-1	Voorraad4.304	55V	960MHz ~ 1.215GHz	-	7.5dB	97W	20 @ 500mA, 5V	5A	200°C (TJ)	Chassis Mount	55AW-1	55AW-1
DME400A	Microsemi Corporation	TRANSISTOR BIPO 55AW-1 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	package: -	Voorraad3.344	-	-	-	-	-	-	-	-	-	-	-
0204-125	Microsemi Corporation	TRANS RF BIPO 125W 500MHZ 55JT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 225MHz ~ 400MHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 8.5dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 16A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55JT Supplier Device Package: 55JT	package: 55JT	Voorraad4.816	60V	225MHz ~ 400MHz	-	7dB ~ 8.5dB	270W	20 @ 1A, 5V	16A	200°C (TJ)	Chassis Mount	55JT	55JT
MSC1450M	Microsemi Corporation	TRANS RF BIPO 910W 28A M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 910W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 28A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	package: M216	Voorraad5.504	65V	1.09GHz	-	7dB	910W	15 @ 1A, 5V	28A	250°C (TJ)	Chassis Mount	M216	M216
MS2473	Microsemi Corporation	TRANS RF BIPO 2300W 46A M112 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 6dB Power - Max: 2300W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V Current - Collector (Ic) (Max): 46A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112	package: M112	Voorraad6.384	65V	1.09GHz	-	6dB	2300W	5 @ 1A, 5V	46A	200°C (TJ)	Chassis Mount	M112	M112
1214-55	Microsemi Corporation	TRANS BIPO 55AW-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	package: 55AW	Voorraad3.136	50V	1.2GHz ~ 1.4GHz	-	7dB	175W	20 @ 1A, 5V	8A	200°C (TJ)	Chassis Mount	55AW	55AW
MS2421	Microsemi Corporation	TRANS RF BIPO 875W 22A M103 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.3dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 22A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M103 Supplier Device Package: M103	package: M103	Voorraad7.232	65V	1.025GHz ~ 1.15GHz	-	6.3dB	875W	10 @ 500mA, 5V	22A	200°C (TJ)	Chassis Mount	M103	M103
TAN250A	Microsemi Corporation	TRANS RF BIPO 60V 30A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 6.2db ~ 7dB Power - Max: 575W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 30A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	package: 55AW	Voorraad4.208	60V	960MHz ~ 1.215GHz	-	6.2db ~ 7dB	575W	10 @ 1A, 5V	30A	200°C (TJ)	Chassis Mount	55AW	55AW
1214-32L	Microsemi Corporation	TRANS RF BIPO 125W 5A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7.8dB ~ 8.9dB Power - Max: 125W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW-1 Supplier Device Package: 55AW-1	package: 55AW-1	Voorraad6.304	50V	1.2GHz ~ 1.4GHz	-	7.8dB ~ 8.9dB	125W	20 @ 1A, 5V	5A	200°C (TJ)	Chassis Mount	55AW-1	55AW-1
DME500	Microsemi Corporation	TRANS RF BIPO 1700W 40A 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6dB ~ 6.5dB Power - Max: 1700W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 40A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	package: 55KT	Voorraad5.776	55V	1.025GHz ~ 1.15GHz	-	6dB ~ 6.5dB	1700W	10 @ 500mA, 5V	40A	200°C (TJ)	Chassis Mount	55KT	55KT
MS2552	Microsemi Corporation	TRANS RF BIPO 880W 24A M112 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.7dB Power - Max: 880W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: 2NLFL Supplier Device Package: 2NLFL	package: 2NLFL	Voorraad6.320	65V	1.025GHz ~ 1.15GHz	-	6.7dB	880W	15 @ 1A, 5V	24A	250°C (TJ)	Chassis Mount	2NLFL	2NLFL
DME375A	Microsemi Corporation	TRANS RF BIPO 875W 30A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.5dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Current - Collector (Ic) (Max): 30A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	package: 55AW	Voorraad3.776	55V	1.025GHz ~ 1.15GHz	-	6.5dB	875W	10 @ 300mA, 5V	30A	200°C (TJ)	Chassis Mount	55AW	55AW
MS2207	Microsemi Corporation	TRANS RF BIPO 24A 65V M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 880W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	package: M216	Voorraad6.352	65V	1.09GHz	-	8dB	880W	10 @ 5A, 5V	24A	250°C (TJ)	Chassis Mount	M216	M216
MSC1350M	Microsemi Corporation	TRANS RF BIPO 720W 19.8A M218 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 7.1dB Power - Max: 720W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 19.8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	package: M218	Voorraad6.816	65V	1.025GHz ~ 1.15GHz	-	7dB ~ 7.1dB	720W	15 @ 1A, 5V	19.8A	200°C (TJ)	Chassis Mount	M218	M218
MS2554	Microsemi Corporation	TRANS RF BIPO 600W 17.8A SO42 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.2dB Power - Max: 600W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 17.8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	package: M218	Voorraad4.688	65V	1.025GHz ~ 1.15GHz	-	6.2dB	600W	15 @ 1A, 5V	17.8A	200°C (TJ)	Chassis Mount	M218	M218
UTV080	Microsemi Corporation	TRANS RF BIPO 65W 2.5A 55JV2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 28V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 9dB ~ 10dB Power - Max: 65W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Channel, DIN Rail Mount Package / Case: 55JV Supplier Device Package: 55JV	package: 55JV	Voorraad7.824	28V	470MHz ~ 860MHz	-	9dB ~ 10dB	65W	10 @ 500mA, 5V	2.5A	200°C (TJ)	Channel, DIN Rail Mount	55JV	55JV
1214-30	Microsemi Corporation	TRANS RF BIPO 88W 4A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 88W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	package: 55AW	Voorraad4.832	50V	1.2GHz ~ 1.4GHz	-	7dB	88W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55AW	55AW
1517-20M	Microsemi Corporation	TRANS RF BIPO 175W 3A 55LV1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.48GHz ~ 1.65GHz Noise Figure (dB Typ @ f): - Gain: 7.6dB ~ 9.3dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 55LV-1 Supplier Device Package: 55LV-1	package: 55LV-1	Voorraad3.232	65V	1.48GHz ~ 1.65GHz	-	7.6dB ~ 9.3dB	175W	20 @ 500mA, 5V	3A	-	Chassis Mount	55LV-1	55LV-1
2224-6L	Microsemi Corporation	TRANS RF BIPO 22W 1.25A 55LV1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 2.2GHz ~ 2.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 22W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 1.25A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LV Supplier Device Package: 55LV	package: 55LV	Voorraad4.496	40V	2.2GHz ~ 2.4GHz	-	7dB	22W	20 @ 1A, 5V	1.25A	200°C (TJ)	Chassis Mount	55LV	55LV
UMIL80	Microsemi Corporation	TRANS RF BIPO 220W 12A 55HU-2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 31V Frequency - Transition: 200MHz ~ 500MHz Noise Figure (dB Typ @ f): - Gain: 9dB ~ 9.5dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55HV Supplier Device Package: 55HV	package: 55HV	Voorraad6.672	31V	200MHz ~ 500MHz	-	9dB ~ 9.5dB	220W	10 @ 1A, 5V	12A	200°C (TJ)	Chassis Mount	55HV	55HV
MS2210	Microsemi Corporation	TRANS RF BIPO 940W 24A M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 940W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	package: M216	Voorraad7.104	65V	960MHz ~ 1.215GHz	-	7dB	940W	10 @ 5A, 5V	24A	200°C (TJ)	Chassis Mount	M216	M216
MDS60L	Microsemi Corporation	TRANS RF BIPO 120W 4A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 120W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	package: 55AW	Voorraad3.808	65V	1.03GHz ~ 1.09GHz	-	10dB	120W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55AW	55AW
JTDB75	Microsemi Corporation	TRANS RF BIPO 220W 8A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 8.2dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	package: 55AW	Voorraad5.760	55V	960MHz ~ 1.215GHz	-	7dB ~ 8.2dB	220W	20 @ 1A, 5V	8A	200°C (TJ)	Chassis Mount	55AW	55AW
2731-20	Microsemi Corporation	TRANS RF BIPO 70W 1.85 55KCR-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 2.7GHz ~ 3.1GHz Noise Figure (dB Typ @ f): - Gain: 8.2dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 1.85A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KCR-1 Supplier Device Package: 55KCR-1	package: 55KCR-1	Voorraad2.896	65V	2.7GHz ~ 3.1GHz	-	8.2dB	70W	-	1.85A	200°C (TJ)	Chassis Mount	55KCR-1	55KCR-1
MS2422	Microsemi Corporation	TRANS RF BIPO 875W 22A M138 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 6.3dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 22A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M138 Supplier Device Package: M138	package: M138	Voorraad5.552	65V	960MHz ~ 1.215GHz	-	6.3dB	875W	10 @ 1A, 5V	22A	200°C (TJ)	Chassis Mount	M138	M138

2729-125

Microsemi Corporation

TRANS RF BIPO 350W 15A 55KS1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 2.7GHz ~ 2.9GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB ~ 9.5dB
Power - Max: 350W
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 600mA, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KS-1
Supplier Device Package: 55KS-1

package: 55KS-1

Voorraad5.008

65V

2.7GHz ~ 2.9GHz

-

9dB ~ 9.5dB

350W

18 @ 600mA, 5V

15A

200°C (TJ)

Chassis Mount

55KS-1

MDS400

Microsemi Corporation

TRANS RF BIPO 1450W 40A 55KT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 6.5dB
Power - Max: 1450W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 40A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT

package: 55KT

Voorraad6.224

55V

1.03GHz ~ 1.09GHz

-

6.5dB

1450W

10 @ 1A, 5V

40A

200°C (TJ)

Chassis Mount

55KT

MS2267

Microsemi Corporation

TRANS RF BIPO 575W 20A M214

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 8.7dB
Power - Max: 575W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M214
Supplier Device Package: M214

package: M214

Voorraad4.592

60V

960MHz ~ 1.215GHz

-

8dB ~ 8.7dB

575W

10 @ 1A, 5V

20A

250°C (TJ)

Chassis Mount

M214

TAN300

Microsemi Corporation

TRANS RF BIPO 65V 20A 55KT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 6.6dB
Power - Max: 1166W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1mA, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT

package: 55KT

Voorraad3.744

65V

960MHz ~ 1.215GHz

-

6.6dB

1166W

10 @ 1mA, 5V

20A

200°C (TJ)

Chassis Mount

55KT

UMIL100A

Microsemi Corporation

TRANS RF BIPO 270W 20A 55JU2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 31V
Frequency - Transition: 225MHz ~ 400MHz
Noise Figure (dB Typ @ f): -
Gain: 7.2dB ~ 8.5dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55JU
Supplier Device Package: 55JU

package: 55JU

Voorraad2.752

31V

225MHz ~ 400MHz

-

7.2dB ~ 8.5dB

270W

10 @ 1A, 5V

20A

150°C (TJ)

Chassis Mount

55JU

JTDB25

Microsemi Corporation

TRANSISTOR BIPO 55AW-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7.5dB
Power - Max: 97W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW-1
Supplier Device Package: 55AW-1

package: 55AW-1

Voorraad4.304

55V

960MHz ~ 1.215GHz

-

7.5dB

97W

20 @ 500mA, 5V

5A

200°C (TJ)

Chassis Mount

55AW-1

DME400A

Microsemi Corporation

TRANSISTOR BIPO 55AW-1

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

package: -

Voorraad3.344

-

0204-125

Microsemi Corporation

TRANS RF BIPO 125W 500MHZ 55JT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 225MHz ~ 400MHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 8.5dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 16A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55JT
Supplier Device Package: 55JT

package: 55JT

Voorraad4.816

60V

225MHz ~ 400MHz

-

7dB ~ 8.5dB

270W

20 @ 1A, 5V

16A

200°C (TJ)

Chassis Mount

55JT

MSC1450M

Microsemi Corporation

TRANS RF BIPO 910W 28A M216

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 910W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 28A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

package: M216

Voorraad5.504

65V

1.09GHz

-

7dB

910W

15 @ 1A, 5V

28A

250°C (TJ)

Chassis Mount

M216

MS2473

Microsemi Corporation

TRANS RF BIPO 2300W 46A M112

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 6dB
Power - Max: 2300W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V
Current - Collector (Ic) (Max): 46A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M112
Supplier Device Package: M112

package: M112

Voorraad6.384

65V

1.09GHz

-

6dB

2300W

5 @ 1A, 5V

46A

200°C (TJ)

Chassis Mount

M112

1214-55

Microsemi Corporation

TRANS BIPO 55AW-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 175W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

package: 55AW

Voorraad3.136

50V

1.2GHz ~ 1.4GHz

-

7dB

175W

20 @ 1A, 5V

8A

200°C (TJ)

Chassis Mount

55AW

MS2421

Microsemi Corporation

TRANS RF BIPO 875W 22A M103

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.3dB
Power - Max: 875W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 22A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M103
Supplier Device Package: M103

package: M103

Voorraad7.232

65V

1.025GHz ~ 1.15GHz

-

6.3dB

875W

10 @ 500mA, 5V

22A

200°C (TJ)

Chassis Mount

M103

TAN250A

Microsemi Corporation

TRANS RF BIPO 60V 30A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 6.2db ~ 7dB
Power - Max: 575W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 30A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

package: 55AW

Voorraad4.208

60V

960MHz ~ 1.215GHz

-

6.2db ~ 7dB

575W

10 @ 1A, 5V

30A

200°C (TJ)

Chassis Mount

55AW

1214-32L

Microsemi Corporation

TRANS RF BIPO 125W 5A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7.8dB ~ 8.9dB
Power - Max: 125W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW-1
Supplier Device Package: 55AW-1

package: 55AW-1

Voorraad6.304

50V

1.2GHz ~ 1.4GHz

-

7.8dB ~ 8.9dB

125W

20 @ 1A, 5V

5A

200°C (TJ)

Chassis Mount

55AW-1

DME500

Microsemi Corporation

TRANS RF BIPO 1700W 40A 55KT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6dB ~ 6.5dB
Power - Max: 1700W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 40A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT

package: 55KT

Voorraad5.776

55V

1.025GHz ~ 1.15GHz

-

6dB ~ 6.5dB

1700W

10 @ 500mA, 5V

40A

200°C (TJ)

Chassis Mount

55KT

MS2552

Microsemi Corporation

TRANS RF BIPO 880W 24A M112

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.7dB
Power - Max: 880W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 24A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2NLFL
Supplier Device Package: 2NLFL

package: 2NLFL

Voorraad6.320

65V

1.025GHz ~ 1.15GHz

-

6.7dB

880W

15 @ 1A, 5V

24A

250°C (TJ)

Chassis Mount

2NLFL

DME375A

Microsemi Corporation

TRANS RF BIPO 875W 30A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.5dB
Power - Max: 875W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Current - Collector (Ic) (Max): 30A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

package: 55AW

Voorraad3.776

55V

1.025GHz ~ 1.15GHz

-

6.5dB

875W

10 @ 300mA, 5V

30A

200°C (TJ)

Chassis Mount

55AW

MS2207

Microsemi Corporation

TRANS RF BIPO 24A 65V M216

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 880W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 24A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

package: M216

Voorraad6.352

65V

1.09GHz

-

8dB

880W

10 @ 5A, 5V

24A

250°C (TJ)

Chassis Mount

M216

MSC1350M

Microsemi Corporation

TRANS RF BIPO 720W 19.8A M218

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 7.1dB
Power - Max: 720W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 19.8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218

package: M218

Voorraad6.816

65V

1.025GHz ~ 1.15GHz

-

7dB ~ 7.1dB

720W

15 @ 1A, 5V

19.8A

200°C (TJ)

Chassis Mount

M218

MS2554

Microsemi Corporation

TRANS RF BIPO 600W 17.8A SO42

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.2dB
Power - Max: 600W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 17.8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218

package: M218

Voorraad4.688

65V

1.025GHz ~ 1.15GHz

-

6.2dB

600W

15 @ 1A, 5V

17.8A

200°C (TJ)

Chassis Mount

M218

UTV080

Microsemi Corporation

TRANS RF BIPO 65W 2.5A 55JV2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 28V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 9dB ~ 10dB
Power - Max: 65W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 2.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Channel, DIN Rail Mount
Package / Case: 55JV
Supplier Device Package: 55JV

package: 55JV

Voorraad7.824

28V

470MHz ~ 860MHz

-

9dB ~ 10dB

65W

10 @ 500mA, 5V

2.5A

200°C (TJ)

Channel, DIN Rail Mount

55JV

1214-30

Microsemi Corporation

TRANS RF BIPO 88W 4A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 88W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

package: 55AW

Voorraad4.832

50V

1.2GHz ~ 1.4GHz

-

7dB

88W

20 @ 500mA, 5V

4A

200°C (TJ)

Chassis Mount

55AW

1517-20M

Microsemi Corporation

TRANS RF BIPO 175W 3A 55LV1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.48GHz ~ 1.65GHz
Noise Figure (dB Typ @ f): -
Gain: 7.6dB ~ 9.3dB
Power - Max: 175W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 3A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 55LV-1
Supplier Device Package: 55LV-1

package: 55LV-1

Voorraad3.232

65V

1.48GHz ~ 1.65GHz

-

7.6dB ~ 9.3dB

175W

20 @ 500mA, 5V

3A

-

Chassis Mount

55LV-1

2224-6L

Microsemi Corporation

TRANS RF BIPO 22W 1.25A 55LV1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 2.2GHz ~ 2.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 22W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 1.25A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55LV
Supplier Device Package: 55LV

package: 55LV

Voorraad4.496

40V

2.2GHz ~ 2.4GHz

-

7dB

22W

20 @ 1A, 5V

1.25A

200°C (TJ)

Chassis Mount

55LV

UMIL80

Microsemi Corporation

TRANS RF BIPO 220W 12A 55HU-2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 31V
Frequency - Transition: 200MHz ~ 500MHz
Noise Figure (dB Typ @ f): -
Gain: 9dB ~ 9.5dB
Power - Max: 220W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 12A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55HV
Supplier Device Package: 55HV

package: 55HV

Voorraad6.672

31V

200MHz ~ 500MHz

-

9dB ~ 9.5dB

220W

10 @ 1A, 5V

12A

200°C (TJ)

Chassis Mount

55HV

MS2210

Microsemi Corporation

TRANS RF BIPO 940W 24A M216

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 940W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 24A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

package: M216

Voorraad7.104

65V

960MHz ~ 1.215GHz

-

7dB

940W

10 @ 5A, 5V

24A

200°C (TJ)

Chassis Mount

M216

MDS60L

Microsemi Corporation

TRANS RF BIPO 120W 4A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 120W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

package: 55AW

Voorraad3.808

65V

1.03GHz ~ 1.09GHz

-

10dB

120W

20 @ 500mA, 5V

4A

200°C (TJ)

Chassis Mount

55AW

JTDB75

Microsemi Corporation

TRANS RF BIPO 220W 8A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 8.2dB
Power - Max: 220W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

package: 55AW

Voorraad5.760

55V

960MHz ~ 1.215GHz

-

7dB ~ 8.2dB

220W

20 @ 1A, 5V

8A

200°C (TJ)

Chassis Mount

55AW

2731-20

Microsemi Corporation

TRANS RF BIPO 70W 1.85 55KCR-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 2.7GHz ~ 3.1GHz
Noise Figure (dB Typ @ f): -
Gain: 8.2dB
Power - Max: 70W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 1.85A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KCR-1
Supplier Device Package: 55KCR-1

package: 55KCR-1

Voorraad2.896

65V

2.7GHz ~ 3.1GHz

-

8.2dB

70W

-

1.85A

200°C (TJ)

Chassis Mount

55KCR-1

MS2422

Microsemi Corporation

TRANS RF BIPO 875W 22A M138

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 6.3dB
Power - Max: 875W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 22A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M138
Supplier Device Package: M138

package: M138

Voorraad5.552

65V

960MHz ~ 1.215GHz

-

6.3dB

875W

10 @ 1A, 5V

22A

200°C (TJ)

Chassis Mount

M138