Pagina 2 - Toshiba Semiconductor and Storage Producten - Transistors - FET's, MOSFET's - Arrays | Heisener Electronics
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Toshiba Semiconductor and Storage Producten - Transistors - FET's, MOSFET's - Arrays

Archief 102
Pagina  2/4
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SSM6L61NU,LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 4A UDFN6

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
package: 6-WDFN Exposed Pad
Voorraad23.022
Standard
20V
4A
-
-
-
-
-
-
Surface Mount
6-WDFN Exposed Pad
6-UDFN (2x2)
SSM6N37FU,LF
Toshiba Semiconductor and Storage

MOSFET ARRAY 2N-CH 20V 250MA US6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
package: 6-TSSOP, SC-88, SOT-363
Voorraad25.446
Logic Level Gate, 1.5V Drive
20V
250mA (Ta)
2.2 Ohm @ 100mA, 4.5V
1V @ 1mA
-
12pF @ 10V
300mW
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6N7002CFU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.17A US6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 170mA
  • Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
  • Power - Max: 285mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
package: 6-TSSOP, SC-88, SOT-363
Voorraad58.848
Standard
60V
170mA
3.9 Ohm @ 100mA, 10V
2.1V @ 250µA
0.35nC @ 4.5V
17pF @ 10V
285mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6P47NU,LF(T
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 2-2Y1A

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
package: 6-WDFN Exposed Pad
Voorraad26.646
Logic Level Gate
20V
4A
95 mOhm @ 1.5A, 4.5V
1V @ 1mA
4.6nC @ 4.5V
290pF @ 10V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-UDFN (2x2)
SSM6P49NU,LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 2-1Y1A

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
package: 6-WDFN Exposed Pad
Voorraad46.176
Logic Level Gate
20V
4A
45 mOhm @ 3.5A, 10V
1.2V @ 1mA
6.74nC @ 4.5V
480pF @ 10V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-UDFN (2x2)
hot SSM6N57NU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A UDFN6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-µDFN(2x2)
package: 6-WDFN Exposed Pad
Voorraad13.344
Standard
30V
4A
46 mOhm @ 2A, 4.5V
1V @ 1mA
4nC @ 4.5V
310pF @ 10V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-µDFN(2x2)
SSM6L35FE,LM
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A ES6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
package: SOT-563, SOT-666
Voorraad77.388
Logic Level Gate
20V
180mA, 100mA
3 Ohm @ 50mA, 4V
1V @ 1mA
-
9.5pF @ 3V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6L36FE,LM
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.5A/0.33A ES6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
  • Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
package: SOT-563, SOT-666
Voorraad35.052
Logic Level Gate
20V
500mA, 330mA
630 mOhm @ 200mA, 5V
1V @ 1mA
1.23nC @ 4V
46pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6N35FE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.18A ES6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 180mA
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
package: SOT-563, SOT-666
Voorraad103.914
Logic Level Gate
20V
180mA
3 Ohm @ 50mA, 4V
1V @ 1mA
-
9.5pF @ 3V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
hot SSM6N58NU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A UDFN6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 84 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
package: 6-WDFN Exposed Pad
Voorraad180.000
Logic Level Gate, 1.8V Drive
30V
4A
84 mOhm @ 2A, 4.5V
1V @ 1mA
1.8nC @ 4.5V
129pF @ 15V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-UDFN (2x2)
SSM6N56FE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.8A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA
  • Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
package: SOT-563, SOT-666
Voorraad34.896
Logic Level Gate, 1.5V Drive
20V
800mA
235 mOhm @ 800mA, 4.5V
1V @ 1mA
1nC @ 4.5V
55pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
SSM6N43FU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.5A US6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
  • Power - Max: 200mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
package: 6-TSSOP, SC-88, SOT-363
Voorraad27.318
Logic Level Gate, 1.5V Drive
20V
500mA
630 mOhm @ 200mA, 5V
1V @ 1mA
1.23nC @ 4V
46pF @ 10V
200mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6N44FE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A ES6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
package: SOT-563, SOT-666
Voorraad95.874
Logic Level Gate
30V
100mA
4 Ohm @ 10mA, 4V
1.5V @ 100µA
-
8.5pF @ 3V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6N35AFE-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A ES6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
  • Power - Max: 250mW
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
package: -
Voorraad251.127
Logic Level Gate, 1.2V Drive
20V
250mA (Ta)
1.1Ohm @ 150mA, 4.5V
1V @ 100µA
0.34nC @ 4.5V
36pF @ 10V
250mW
150°C
Surface Mount
SOT-563, SOT-666
ES6
SSM6N62TU-LXHF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.8A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
package: -
Voorraad3.504
Logic Level Gate, 1.2V Drive
20V
800mA (Ta)
85mOhm @ 800mA, 4.5V
1V @ 1mA
2nC @ 4.5V
177pF @ 10V
500mW (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
UF6
SSM6N44FU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A US6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
  • Power - Max: 200mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
package: -
Voorraad43.383
-
30V
100mA (Ta)
4Ohm @ 10mA, 4V
1.5V @ 100µA
-
8.5pF @ 3V
200mW (Ta)
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM5P15FU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 0.1A USV

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
  • Power - Max: 200mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
package: -
Voorraad8.376
-
30V
100mA (Ta)
12Ohm @ 10mA, 4V
1.7V @ 100µA
-
9.1pF @ 3V
200mW (Ta)
150°C
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
SSM6N951L-EFF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 12V 8A 6TCSPA

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-TCSPA (2.14x1.67)
package: -
Voorraad27.780
-
12V
8A
5.1mOhm @ 8A, 4.5V
-
-
-
-
-
Surface Mount
6-SMD, No Lead
6-TCSPA (2.14x1.67)
SSM6N17FU-TE85L-F
Toshiba Semiconductor and Storage

MOSFET 2N-CH 50V 0.1A US6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
  • Power - Max: 200mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
package: -
Voorraad8.982
-
50V
100mA (Ta)
20Ohm @ 10mA, 4V
1.5V @ 1µA
-
7pF @ 3V
200mW (Ta)
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6P15FU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 0.1A US6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
  • Power - Max: 200mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
package: -
Voorraad97.317
-
30V
100mA
12Ohm @ 10mA, 4V
1.7V @ 100µA
-
9.1pF @ 3V
200mW (Ta)
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6N7002KFU-LXH
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.3A US6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
  • Power - Max: 285mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
package: -
Voorraad16.605
-
60V
300mA (Ta)
1.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.6nC @ 4.5V
40pF @ 10V
285mW (Ta)
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6N35AFU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A US6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
  • Power - Max: 285mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
package: -
Voorraad14.265
-
20V
250mA (Ta)
1.1Ohm @ 150mA, 4.5V
1V @ 100µA
0.34nC @ 4.5V
36pF @ 10V
285mW (Ta)
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6L36TU-LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.5A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 330mA (Ta)
  • Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V, 1.2nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, 43pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
package: -
Voorraad11.970
Logic Level Gate, 1.5V Drive
20V
500mA (Ta), 330mA (Ta)
630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V
1V @ 1mA
1.23nC @ 4V, 1.2nC @ 4V
46pF @ 10V, 43pF @ 10V
500mW (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
UF6
SSM6P35AFE-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.25A ES6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
  • Power - Max: 150mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
package: -
Voorraad23.136
Logic Level Gate, 1.2V Drive
20V
250mA (Ta)
1.4Ohm @ 150mA, 4.5V
1V @ 100µA
-
42pF @ 10V
150mW (Ta)
150°C
Surface Mount
SOT-563, SOT-666
ES6
SSM6L12TU-LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V/20V 0.5A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
package: -
Voorraad5.562
-
30V, 20V
500mA (Ta)
145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
1.1V @ 100µA
-
245pF @ 10V, 218pF @ 10V
500mW
150°C
Surface Mount
6-SMD, Flat Leads
UF6
SSM6N39TU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 1.6A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
package: -
Request a Quote
-
20V
1.6A (Ta)
119mOhm @ 1A, 4V
1V @ 1mA
7.5nC @ 4V
260pF @ 10V
500mW
150°C
Surface Mount
6-SMD, Flat Leads
UF6
SSM6N62TU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.8A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
package: -
Voorraad26.832
Logic Level Gate, 1.2V Drive
20V
800mA (Ta)
85mOhm @ 800mA, 4.5V
1V @ 1mA
2nC @ 4.5V
177pF @ 10V
500mW (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
UF6
SSM6P69NU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
  • Power - Max: 1W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-µDFN (2x2)
package: -
Voorraad49.242
Logic Level Gate, 1.8V Drive
20V
4A (Ta)
45mOhm @ 3.5A, 10V
1.2V @ 1mA
6.74nC @ 4.5V
480pF @ 10V
1W (Ta)
150°C
Surface Mount
6-WDFN Exposed Pad
6-µDFN (2x2)
SSM6N36TU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.5A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
package: -
Voorraad34.851
Logic Level Gate, 1.5V Drive
20V
500mA (Ta)
630mOhm @ 200mA, 5V
1V @ 1mA
1.23nC @ 4V
46pF @ 10V
500mW (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
UF6
SSM6N815R-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 100V 2A 6TSOPF

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
  • Power - Max: 1.8W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-TSOP-F
package: -
Request a Quote
Logic Level Gate, 4V Drive
100V
2A (Ta)
103mOhm @ 2A, 10V
2.5V @ 100µA
3.1nC @ 4.5V
290pF @ 15V
1.8W (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
6-TSOP-F