Afbeelding |
Onderdeelnummer |
Fabrikant |
Omschrijving |
package |
Voorraad |
Aantal |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
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package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 500 V | 18.5A (Ta) | 10V | 3.7V @ 790µA | 38 nC @ 10 V | 1350 pF @ 300 V | ±30V | - | 40W (Tc) | 190mOhm @ 7.9A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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package: - |
Voorraad63 |
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MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 3.7V @ 1mA | 48 nC @ 10 V | 1680 pF @ 300 V | ±30V | - | 165W (Tc) | 155mOhm @ 10A, 10V | 150°C | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR PS-
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package: - |
Voorraad8.940 |
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MOSFET (Metal Oxide) | 40 V | 5A (Ta) | 6V, 10V | 3V @ 1mA | 11.8 nC @ 10 V | 505 pF @ 10 V | ±20V | - | 940mW (Ta) | 51.2mOhm @ 2.5A, 10V | 175°C | Surface Mount | PS-8 | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.4A UFM
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package: - |
Voorraad5.640 |
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MOSFET (Metal Oxide) | 20 V | 4.4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 24.8 nC @ 4.5 V | 1800 pF @ 10 V | +6V, -8V | - | 500mW (Ta) | 25.8mOhm @ 4A, 4.5V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
SMOS P-CH VDSS=-20V, VGSS=+6/-8V
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package: - |
Voorraad7.251 |
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MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | 840 pF @ 10 V | +6V, -8V | - | 1W (Ta) | 42.7mOhm @ 3A, 4.5V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
UMOS10 TO-220SIS 80V 6.8MOHM
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package: - |
Voorraad120 |
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MOSFET (Metal Oxide) | 80 V | 58A (Tc) | 6V, 10V | 3.5V @ 500µA | 39 nC @ 10 V | 2700 pF @ 40 V | ±20V | - | 41W (Tc) | 6.8mOhm @ 29A, 10V | 175°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 3.9A SOT23F
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package: - |
Voorraad8.499 |
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MOSFET (Metal Oxide) | 20 V | 3.9A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | 290 pF @ 10 V | +6V, -8V | - | 1W (Ta) | 93mOhm @ 1.5A, 4.5V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
AECQ MOSFET PCH -30V -6A SOT23F
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package: - |
Voorraad30.726 |
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MOSFET (Metal Oxide) | 30 V | 6A (Ta) | 1.8V, 10V | 1.2V @ 1mA | 8.2 nC @ 4.5 V | 560 pF @ 15 V | +6V, -12V | - | 1W (Ta) | 42mOhm @ 5A, 10V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
SMALL LOW RON PCH MOSFETS VDSS:-
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package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 1.7V @ 100µA | - | 9.1 pF @ 3 V | ±20V | - | 100mW (Ta) | 12Ohm @ 10mA, 4V | 150°C | Surface Mount | CST3 | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
G3 650V SIC-MOSFET TO-247 83MOH
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package: - |
Voorraad426 |
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SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 18V | 5V @ 600µA | 28 nC @ 18 V | 873 pF @ 400 V | +25V, -10V | - | 111W (Tc) | 113mOhm @ 15A, 18V | 175°C | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
UMOS9 SOP-ADV(N) PD=78W F=1MHZ
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package: - |
Voorraad34.062 |
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MOSFET (Metal Oxide) | 30 V | 150A (Tc) | 4.5V, 10V | 2.3V @ 1mA | 74 nC @ 10 V | 6900 pF @ 15 V | ±20V | - | 800mW (Ta), 170W (Tc) | 0.9mOhm @ 50A, 10V | 150°C | Surface Mount | 8-SOP Advance (5x5.75) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
SMOS LOW RON VDS:-60V VGSS:+10/-
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package: - |
Voorraad29.604 |
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MOSFET (Metal Oxide) | 60 V | 400mA (Ta) | 4V, 10V | 2V @ 1mA | 3 nC @ 10 V | 82 pF @ 10 V | +10V, -20V | - | 600mW (Ta) | 1.55Ohm @ 200mA, 10V | 150°C | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2.5A UF6
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package: - |
Voorraad17.994 |
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MOSFET (Metal Oxide) | 20 V | 2.5A (Ta) | 2V, 4.5V | 1.2V @ 200µA | - | 800 pF @ 10 V | ±10V | - | 500mW (Ta) | 64mOhm @ 1.5A, 4.5V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 8A DPAK
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package: - |
Voorraad10.179 |
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MOSFET (Metal Oxide) | 60 V | 8A (Ta) | 6V, 10V | 3V @ 1mA | 19 nC @ 10 V | 890 pF @ 10 V | +10V, -20V | - | 27W (Tc) | 104mOhm @ 4A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A 4DFN
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package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 25A (Ta) | 10V | 3.5V @ 1.2mA | 40 nC @ 10 V | 2400 pF @ 300 V | ±30V | - | 180W (Tc) | 135mOhm @ 7.5A, 10V | 150°C | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q SS MOS P-CH LOGIC-LEV
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package: - |
Voorraad7.932 |
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MOSFET (Metal Oxide) | 40 V | 7A (Ta) | 4V, 10V | 2V @ 100µA | 24.2 nC @ 10 V | 1020 pF @ 10 V | +10V, -20V | - | 1.5W (Ta) | 35mOhm @ 2.5A, 10V | 150°C | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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package: - |
Voorraad78 |
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MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 3.5V @ 1.5mA | 65 nC @ 10 V | 3000 pF @ 300 V | ±30V | - | 230W (Tc) | 88mOhm @ 9.4A, 10V | 150°C | Through Hole | TO-247-4L(T) | TO-247-4 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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package: - |
Voorraad4.038 |
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MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 4.5V, 10V | 2.5V @ 300µA | 33 nC @ 10 V | 2040 pF @ 50 V | ±20V | - | 75W (Tc) | 10.6mOhm @ 20A, 10V | 175°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
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package: - |
Voorraad141 |
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MOSFET (Metal Oxide) | 100 V | 100A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 161 nC @ 10 V | 9500 pF @ 50 V | ±20V | - | 306W (Tc) | 2.9mOhm @ 50A, 10V | 175°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 10A TO220SIS
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package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 10A (Ta) | 10V | 4V @ 1mA | 40 nC @ 10 V | 1300 pF @ 25 V | ±30V | - | 45W (Tc) | 750mOhm @ 5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DTM
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package: - |
Voorraad7.182 |
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MOSFET (Metal Oxide) | 650 V | 13.7A (Ta) | 10V | 3.5V @ 690µA | 35 nC @ 10 V | 1300 pF @ 300 V | ±30V | - | 139W (Tc) | 280mOhm @ 6.9A, 10V | 150°C | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
G3 1200V SIC-MOSFET TO-247-4L 14
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package: - |
Voorraad360 |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 20A (Tc) | 18V | 5V @ 1mA | 24 nC @ 18 V | 691 pF @ 800 V | +25V, -10V | - | 107W (Tc) | 191mOhm @ 10A, 18V | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 25A 8-SOPA
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package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 25A (Ta) | - | 2.3V @ 1mA | 22 nC @ 10 V | 1375 pF @ 10 V | - | - | - | 21mOhm @ 13A, 10V | - | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
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package: - |
Voorraad150 |
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MOSFET (Metal Oxide) | 500 V | 11.5A (Ta) | 10V | 3.7V @ 600µA | 25 nC @ 10 V | 890 pF @ 300 V | ±30V | - | 35W (Tc) | 300mOhm @ 5.8A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 46A 8SOP
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package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 46A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 90 nC @ 10 V | 7540 pF @ 10 V | ±20V | - | 1.6W (Ta), 45W (Tc) | 3.6mOhm @ 23A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
AECQ MOSFET NCH 100V 3.5A SOT23F
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package: - |
Voorraad34.539 |
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MOSFET (Metal Oxide) | 100 V | 3.5A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | 430 pF @ 15 V | ±20V | - | 1.2W (Ta) | 69mOhm @ 2A, 10V | 175°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 15A TO220SIS
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package: - |
Voorraad468 |
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MOSFET (Metal Oxide) | 650 V | 15A (Ta) | 10V | 4V @ 610µA | 25 nC @ 10 V | 1370 pF @ 300 V | ±30V | - | 40W (Tc) | 190mOhm @ 7.5A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DSO
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package: - |
Voorraad15.000 |
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MOSFET (Metal Oxide) | 100 V | 90A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 67 nC @ 10 V | 6300 pF @ 50 V | ±20V | - | 960mW (Ta), 170W (Tc) | 3.7mOhm @ 45A, 10V | 175°C | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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package: - |
Voorraad135 |
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MOSFET (Metal Oxide) | 650 V | 17.3A (Ta) | 10V | 4.5V @ 900µA | 50 nC @ 10 V | 1800 pF @ 300 V | ±30V | - | 45W (Tc) | 230mOhm @ 8.7A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
SMOS LOW RON NCH ID: 4A VDSS: 30
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package: - |
Voorraad18.000 |
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MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 1.8V, 4.5V | 1V @ 1mA | 2.2 nC @ 4.5 V | 200 pF @ 10 V | +12V, -8V | - | 1W (Ta) | 56mOhm @ 2A, 4.5V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |