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Transphorm |
650V, 150M
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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package: - |
Voorraad3.024 |
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Transphorm |
GAN FET 600V 9A PQFN88
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (8x8)
- Package / Case: 4-PowerDFN
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package: 4-PowerDFN |
Voorraad6.756 |
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Transphorm |
GAN FET 650V 35A TO247
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.6V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 400V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 62 mOhm @ 22A, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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package: TO-247-3 |
Voorraad22.224 |
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Transphorm |
GAN FET 650V 20A PQFN88
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.6V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (8x8)
- Package / Case: 3-PowerDFN
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package: 3-PowerDFN |
Voorraad10.308 |
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Transphorm |
GAN FET 650V 16A PQFN88
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 81W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (8x8)
- Package / Case: 3-PowerDFN
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package: 3-PowerDFN |
Voorraad7.980 |
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Transphorm |
MOSFET N-CH GANFET 650V 16A PQFN
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 480V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 81W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (8x8)
- Package / Case: 4-PowerDFN
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package: 4-PowerDFN |
Voorraad7.520 |
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Transphorm |
MOSFET N-CH GANFET 650V 16A PQFN
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 480V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 81W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (8x8)
- Package / Case: 3-PowerDFN
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package: 3-PowerDFN |
Voorraad8.580 |
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Transphorm |
GAN FET 600V 9A PQFN88
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (8x8)
- Package / Case: 3-PowerDFN
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package: 3-PowerDFN |
Voorraad6.684 |
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Transphorm |
MOSFET N-CH GANFET 650V TO220AB
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 480V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 81W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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package: TO-220-3 |
Voorraad7.152 |
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Transphorm |
GAN FET 650V 27A TO220
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.6V @ 400uA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 400V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 72 mOhm @ 17A, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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package: TO-220-3 |
Voorraad9.528 |
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Transphorm |
GAN FET 650V 20A PQFN88
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.6V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (8x8)
- Package / Case: 3-PowerDFN
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package: 3-PowerDFN |
Voorraad7.536 |
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Transphorm |
GAN FET 600V 17A TO220
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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package: TO-220-3 |
Voorraad6.912 |
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Transphorm |
GAN FET 600V 17A PQFN88
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (8x8)
- Package / Case: 3-PowerDFN
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package: 3-PowerDFN |
Voorraad8.376 |
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Transphorm |
GAN FET 600V 17A PQFN88
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (8x8)
- Package / Case: 4-PowerDFN
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package: 4-PowerDFN |
Voorraad12.732 |
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Transphorm |
GAN FET 650V 20A TO220
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.6V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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package: TO-220-3 |
Voorraad17.796 |
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Transphorm |
GAN FET 600V 17A TO220
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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package: TO-220-3 |
Voorraad8.664 |
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Transphorm |
GAN FET 600V 9A TO220
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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package: TO-220-3 |
Voorraad6.060 |
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Transphorm |
GAN FET 600V 9A TO220
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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package: TO-220-3 |
Voorraad7.176 |
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Transphorm |
GAN FET 650V 50A TO247
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.65V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 2197pF @ 400V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 178W (Tc)
- Rds On (Max) @ Id, Vgs: 41 mOhm @ 32A, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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package: TO-247-3 |
Voorraad20.076 |
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Transphorm |
GAN FET 650V 36A TO247
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.6V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 400V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 22A, 8V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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package: TO-247-3 |
Voorraad12.948 |
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Transphorm |
GAN FET 650V 20A PQFN88
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Vgs(th) (Max) @ Id: 2.6V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (8x8)
- Package / Case: 4-PowerDFN
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package: 4-PowerDFN |
Voorraad19.224 |
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Transphorm |
CASCODE GAN HB 600V 70A MODULE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 30A, 8V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V
- Power - Max: 470W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: Module
- Supplier Device Package: Module
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package: Module |
Voorraad5.616 |
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