Nexperia Introduces the First 80 V and 100 V Hot Swap Dedicated MosFets (AsFeTs) | Heisener Electronics
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Nexperia Introduces the First 80 V and 100 V Hot Swap Dedicated MosFets (AsFeTs)

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Post-datum: 2023-04-27, Nexperia USA Inc.

Nexperia announced the launch of its first 80 V and 100 V hot-swapable dedicated mosFets (ASFeTs) in a compact 8x8 mm LFPAK88 package with enhanced Secure Workspace (SOA) features. With decades of expertise in developing advanced wafer and packaging solutions, Nexperia has introduced the PSMN2R3-100SSE (100 V, 2.3 m N channel ASFET) as the first choice in its portfolio. Combined with low RDS(on) and strong linear mode (secure workspace) performance in a compact 8x8mm package size, it meets the demanding requirements of hot swap applications.

                 


Fully optimized for demanding hot-plug and soft-start applications, these new AsFeTs operate at 175°C and are suitable for advanced telecommunications and computing equipment. Nexperia also released an 80 V ASFET product, PSMN1R9-100SSE (80 V, 1.9 mΩ), designed to respond to the growing trend of using 48 V power rails in computing servers and other industrial applications, where, Environmental conditions allow mosFETs to adopt lower VDS breakdown voltage ratings.

Asfets with enhanced SOAs are increasingly popular in hot plug and soft launch applications. The strong linear mode performance of these products is essential for efficient and reliable management of surge current when capacitive loads are introduced into the charged backplane. Low RDS(on) is equally important to minimize I2R losses when the ASFETs are fully on-enabled. In addition to lower RDS(on) and A more compact package size, Nexperia's third generation enhanced SOA technology delivers A 10% SOA performance improvement over previous generations of D2PAK packages (33 A and 30 A at 50 V and 1 ms, respectively).

Until now, AsFeTs suitable for hot swap and computing applications have typically come in the larger size D2PAK package (16x10 mm). The LFPAK88 package is an ideal alternative to the D2PAK package with space savings of up to 60%. The RDS(on) of the PSMN2R3-100SSE are only 2.3 mΩ, which is at least 40% lower than existing devices. Not only does the LFPAK88 increase power density by a factor of 58, it also offers twice the ID(max) current rating as well as ultra-low thermal resistance and resistance.

The product combines the functional benefits of Nexperia's advanced wafer and copper-chip packaging technology, including smaller footprint, lower RDS(on), and better SOA performance. Nexperia also offers the 25 V, 30 V, 80 V, and 100 V Asfets in a 5x6 mm LFPAK56E package, optimized for low-power applications that require smaller PCB pin sizes.

                                 

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