The new MOSFET minimizes derating and improves current sharing | Heisener Electronics
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The new MOSFET minimizes derating and improves current sharing

Technology Cover
Post-datum: 2021-12-13, NXP

   Nexperia is targeted for hot-plug and soft-start applications in 5-gram telecommunications systems, 48-V server environments and industrial equipment requiring electronic fuses and battery protection. As a result, new 80 V and 100 V ASFETs with enhanced SOA performance have been released

   The new hot-swapable ASFET features the company's latest silicon technology and a copper-clip package structure that significantly enhances SOA and reduces PCB area. Asfet is a new type of MOSFET that can be used in specific design scenarios. New levels of performance can be achieved by focusing on specific parameters that are critical to the application, sometimes at the expense of other parameters that are less important in the same design.

   Previously, MOSFEts suffered from Spirito effects, with SOA performance rapidly declining due to thermal instability at higher voltages. The company's rugged enhanced SOA technology eliminates the "Spirito-knee" and achieves a 166% increase in SOA at 50V compared to previous generations of D2PAK.

   Mike Becker, Senior International Product Marketing Manager at Nexperia, comments: "Traditionally, SOA has only been specified at 25 degrees Celsius, which means designers have to reduce their operations in hot environments. Our new hot-swappable ASFET includes SOA specification 125C, eliminating this time-consuming task and proving Nexperia performs well even at high temperatures." Another important advance is the inclusion of 125C SOA features in the data tables.

   The new LFPAK56E product is only 5mm × 6mm × 1.1mm, and the PCB footprint and device height are reduced by 80% and 75%, respectively, compared to previous generations of D2PAK. The device also provides a maximum junction temperature of 175C, which complies with THE IPC9592 regulations for telecommunications and industrial applications. The new PSMN4R2-80YSE (80V, 4.2Mohm) and PSMN4R8-100YSE (100V, 4.8Mohm) hot-swappable ASFeT are packaged in the POWER-SO8-compatible LFPAK56E. Unique internal copper clamp construction package improves thermal and electrical performance while greatly reducing footprint size.

   Becker added, "In high-power applications that require multiple hot-swappable MOSFets to be used in parallel, further benefits are improved current sharing, improved reliability and reduced system costs. Nexperia is widely recognized as the market leader in hot-swappable MOSFEts. With these latest ASFETs, we are raising the bar once again."

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