Pagina 2 - Vishay Siliconix Producten - Transistors - FET's, MOSFET's - Arrays | Heisener Electronics
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Vishay Siliconix Producten - Transistors - FET's, MOSFET's - Arrays

Archief 749
Pagina  2/25
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SIA915DJ-T4-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 3.7A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
  • Power - Max: 1.9W (Ta), 6.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SC-70-6 Dual
  • Supplier Device Package: PowerPAK® SC-70-6 Dual
package: -
Request a Quote
-
30V
3.7A (Ta), 4.5A (Tc)
87mOhm @ 2.9A, 10V
2.2V @ 250µA
9nC @ 10V
275pF @ 15V
1.9W (Ta), 6.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
SQ1922EEH-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 20V 0.84A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
package: -
Voorraad35.856
-
20V
840mA (Tc)
350mOhm @ 400mA, 4.5V
1.5V @ 250µA
1.2nC @ 4.5V
50pF @ 10V
1.5W
-55°C ~ 175°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
SQ4917CEY-T1_GE3
Vishay Siliconix

MOSFET 2P-CH 60V 8A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
  • Power - Max: 5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Voorraad10.995
-
60V
8A (Tc)
48mOhm @ 4.3A, 10V
2.5V @ 250µA
65nC @ 10V
1910pF @ 30V
5W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SIS590DN-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 100V 2.7A PPAK1212

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
  • Rds On (Max) @ Id, Vgs: 167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 265pF 2 50V, 325pF @ 50V
  • Power - Max: 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8 Dual
  • Supplier Device Package: PowerPAK® 1212-8 Dual
package: -
Request a Quote
-
100V
2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
2.5V @ 250µA
-
265pF 2 50V, 325pF @ 50V
2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8 Dual
PowerPAK® 1212-8 Dual
SIZ980BDT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 23.7A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V
  • Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
package: -
Voorraad40.779
-
30V
23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
2.2V @ 250µA
18nC @ 10V, 79nC @ 10V
790pF @ 15V, 3655pF @ 15V
3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)
SQJ262EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 15A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V
  • Power - Max: 27W (Tc), 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
package: -
Voorraad53.820
-
60V
15A (Tc), 40A (Tc)
35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
2.5V @ 250µA
10nC @ 10V, 23nC @ 10V
550pF @ 25V, 1260pF @ 25V
27W (Tc), 48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual Asymmetric
SQ1922AEEH-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 20V 0.85A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
  • Power - Max: 1.5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
package: -
Voorraad69.702
-
20V
850mA (Tc)
300mOhm @ 400mA, 4.5V
2.5V @ 250µA
1.2nC @ 4.5V
60pF @ 10V
1.5W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
SI4500BDY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 6.6A 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Request a Quote
Logic Level Gate
20V
6.6A, 3.8A
20mOhm @ 9.1A, 4.5V
1.5V @ 250µA
17nC @ 4.5V
-
1.3W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SQ4940AEY-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 40V 8A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
  • Power - Max: 4W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Voorraad37.578
-
40V
8A (Tc)
24mOhm @ 5.3A, 10V
2.5V @ 250µA
43nC @ 10V
741pF @ 20V
4W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SQUN702E-T1_GE3
Vishay Siliconix

MOSFET N/P-CH 40V/200V 30A DIE

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V, 200V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
  • Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
  • Power - Max: 48W (Tc), 60W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: Die
  • Supplier Device Package: Die
package: -
Request a Quote
-
40V, 200V
30A (Tc), 20A (Tc)
9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
2.5V @ 250µA, 3.5V @ 250µA
23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
48W (Tc), 60W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
Die
Die
SI1539CDL-T1-BE3
Vishay Siliconix

MOSFET N/P-CH 30V 0.7A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
  • Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, 3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 34pF @ 15V
  • Power - Max: 290mW (Ta), 340mW (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
package: -
Request a Quote
-
30V
700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V
2.5V @ 250µA
1.5nC @ 10V, 3nC @ 10V
28pF @ 15V, 34pF @ 15V
290mW (Ta), 340mW (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
SI6954ADQ-T1-BE3
Vishay Siliconix

MOSFET 2N-CH 30V 3.1A 8TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: -
Voorraad27.000
-
30V
3.1A (Ta)
53mOhm @ 3.4A, 10V
1V @ 250µA
16nC @ 10V
-
830mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SI4511DY-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V 7.2A 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Request a Quote
Logic Level Gate
20V
7.2A, 4.6A
14.5mOhm @ 9.6A, 10V
1.8V @ 250µA
18nC @ 4.5V
-
1.1W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SQJB46ELP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
  • Power - Max: 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
package: -
Voorraad2.190
-
40V
30A (Tc)
8mOhm @ 8A, 10V
2.2V @ 250µA
40nC @ 10V
2100pF @ 25V
34W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SIZF360DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 23A 6POWERPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
  • Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerPair™
  • Supplier Device Package: 6-PowerPair™
package: -
Request a Quote
-
30V
23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
2.2V @ 250µA
22nC @ 10V, 62nC @ 10V
1100pF @ 15V, 3150pF @ 15V
3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-PowerPair™
6-PowerPair™
SISF00DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 60A PPAK 12

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
  • Power - Max: 69.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8SCD Dual
  • Supplier Device Package: PowerPAK® 1212-8SCD Dual
package: -
Voorraad61.611
-
30V
60A (Tc)
5mOhm @ 10A, 10V
2.1V @ 250µA
53nC @ 10V
2700pF @ 15V
69.4W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8SCD Dual
PowerPAK® 1212-8SCD Dual
SI1036X-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 0.61A SC89-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
  • Rds On (Max) @ Id, Vgs: 540mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V
  • Power - Max: 220mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
package: -
Voorraad28.047
-
30V
610mA (Ta)
540mOhm @ 500mA, 4.5V
1V @ 250µA
1.2nC @ 4.5V
36pF @ 15V
220mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
SQJB46ELP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
  • Power - Max: 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
package: -
Voorraad9.000
-
40V
30A (Tc)
8mOhm @ 8A, 10V
2.2V @ 250µA
40nC @ 10V
2100pF @ 25V
34W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SQJ560EP-T1_BE3
Vishay Siliconix

MOSFET N/P-CH 60V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 18A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
  • Power - Max: 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
package: -
Voorraad17.970
-
60V
30A (Tc), 18A (Tc)
12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
2.5V @ 250µA
30nC @ 10V, 45nC @ 10V
1650pF @ 25V
34W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SQJ560EP-T1_GE3
Vishay Siliconix

MOSFET N/P-CH 60V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 18A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
  • Power - Max: 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
package: -
Voorraad41.556
-
60V
30A (Tc), 18A (Tc)
12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
2.5V @ 250µA
30nC @ 10V, 45nC @ 10V
1650pF @ 25V
34W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SIS9446DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 40V 11.3A/34A PPAK

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 34A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V
  • Power - Max: 2.6W (Ta), 23W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8
  • Supplier Device Package: PowerPAK® 1212-8
package: -
Request a Quote
-
40V
11.3A (Ta), 34A (Tc)
12mOhm @ 10A, 10V
2.3V @ 250µA
16nC @ 10V
720pF @ 20V
2.6W (Ta), 23W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIZF5302DT-T1-RE3
Vishay Siliconix

MOSFET 2N-CH 30V 28.1A PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
  • Power - Max: 3.8W (Ta), 48.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerPair™
  • Supplier Device Package: PowerPAIR® 3x3FS
package: -
Voorraad15.843
-
30V
28.1A (Ta), 100A (Tc)
3.2mOhm @ 10A, 10V
2V @ 250µA
22.2nC @ 10V
1030pF @ 15V
3.8W (Ta), 48.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerPair™
PowerPAIR® 3x3FS
SIZ328DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 25V 8PWR33

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
  • Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-Power33 (3x3)
package: -
Voorraad8.550
-
25V
11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
2.5V @ 250µA
6.9nC @ 10V, 11.3nC @ 10V
325pF @ 10V, 600pF @ 10V
2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-Power33 (3x3)
SQ3985EV-T1_GE3
Vishay Siliconix

MOSFET 2P-CH 20V 3.9A 6TSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
  • Power - Max: 3W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
package: -
Voorraad12.420
-
20V
3.9A (Tc)
145mOhm @ 2.8A, 4.5V
1.5V @ 250µA
4.6nC @ 4.5V
350pF @ 10V
3W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
SQ3985EV-T1_BE3
Vishay Siliconix

MOSFET 2P-CH 20V 3.9A 6TSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
  • Power - Max: 3W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
package: -
Request a Quote
-
20V
3.9A (Tc)
145mOhm @ 2.8A, 4.5V
1.5V @ 250µA
4.6nC @ 10V
350pF @ 10V
3W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
SQJ912BEP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
package: -
Voorraad13.311
-
40V
30A (Tc)
11mOhm @ 9A, 10V
2V @ 250µA
60nC @ 10V
3000pF @ 25V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SQ4284EY-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 40V 8A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Power - Max: 3.9W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Voorraad14.481
-
40V
8A (Tc)
13.5mOhm @ 7A, 10V
2.5V @ 250µA
45nC @ 10V
2200pF @ 25V
3.9W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SIS9634LDN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 6A PPAK 1212

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
  • Power - Max: 2.5W (Ta), 17.9W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8 Dual
  • Supplier Device Package: PowerPAK® 1212-8 Dual
package: -
Voorraad35.490
-
60V
6A (Ta), 6A (Tc)
31mOhm @ 5A, 10V
3V @ 250µA
11nC @ 10V
420pF @ 30V
2.5W (Ta), 17.9W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8 Dual
PowerPAK® 1212-8 Dual
SI7911DN-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 4.2A 1212-8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 5.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8 Dual
  • Supplier Device Package: PowerPAK® 1212-8 Dual
package: -
Request a Quote
Logic Level Gate
20V
4.2A
51mOhm @ 5.7A, 4.5V
1V @ 250µA
15nC @ 4.5V
-
1.3W
-
Surface Mount
PowerPAK® 1212-8 Dual
PowerPAK® 1212-8 Dual
SQ4937EY-T1_BE3
Vishay Siliconix

MOSFET 2P-CH 30V 5A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
  • Power - Max: 3.3W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Voorraad3.000
-
30V
5A (Tc)
75mOhm @ 3.9A, 10V
2.5V @ 250µA
15nC @ 10V
480pF @ 25V
3.3W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC