Pagina 3 - Vishay Siliconix Producten - Transistors - FET's, MOSFET's - Arrays | Heisener Electronics
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Vishay Siliconix Producten - Transistors - FET's, MOSFET's - Arrays

Archief 749
Pagina  3/25
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SI4946CDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 5.2A/6.1A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc)
  • Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
  • Power - Max: 2W (Ta), 2.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: -
Request a Quote
-
60V
5.2A (Ta), 6.1A (Tc)
40.9mOhm @ 5.2A, 10V
3V @ 250µA
10nC @ 10V
350pF @ 30V
2W (Ta), 2.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SIZF914DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 25V 23.5A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 10V, 4670pF @ 10V
  • Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
package: -
Request a Quote
-
25V
23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)
3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V
2.4V @ 250µA, 2.2V @ 250µA
21nC @ 10V, 98nC @ 10V
1050pF @ 10V, 4670pF @ 10V
3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)
SIZ260DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 80V 8.9A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)
  • Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V
  • Power - Max: 4.3W (Ta), 33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (3.3x3.3)
package: -
Voorraad2.508
-
80V
8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)
24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V
2.4V @ 250µA
27nC @ 10V
820pF @ 40V
4.3W (Ta), 33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (3.3x3.3)
SI9634DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 6.2A/8A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
  • Power - Max: 2W (Ta), 3.6W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Voorraad29.919
-
60V
6.2A (Ta), 8A (Tc)
29mOhm @ 5A, 10V
3V @ 250µA
11nC @ 10V
420pF @ 30V
2W (Ta), 3.6W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI1965DH-T1-BE3
Vishay Siliconix

MOSFET 2P-CH 12V 1.3A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
  • Power - Max: 740mW (Ta), 1.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
package: -
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-
12V
1.14A (Ta), 1.3A (Tc)
390mOhm @ 1A, 4.5V
1V @ 250µA
4.2nC @ 8V
120pF @ 6V
740mW (Ta), 1.25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
SISF06DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 28A PPAK 1212-8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V
  • Power - Max: 5.2W (Ta), 69.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8SCD
  • Supplier Device Package: PowerPAK® 1212-8SCD
package: -
Voorraad34.188
-
30V
28A (Ta), 101A (Tc)
4.5mOhm @ 7A, 10V
2.3V @ 250µA
45nC @ 10V
2050pF @ 15V
5.2W (Ta), 69.4W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8SCD
PowerPAK® 1212-8SCD
SIZ346DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 17A/30A 8PWR33

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
  • Power - Max: 16W, 16.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-Power33 (3x3)
package: -
Voorraad11.772
-
30V
17A (Tc), 30A (Tc)
28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
2.2V @ 250µA, 2.4V @ 250µA
5nC @ 4.5V, 9nC @ 4.5V
325pF @ 15V, 650pF @ 15V
16W, 16.7W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-Power33 (3x3)
SIZ254DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 70V 11.7A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 70V
  • Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V
  • Power - Max: 4.3W (Ta), 33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (3.3x3.3)
package: -
Voorraad2.700
-
70V
11.7A (Ta), 32.5A (Tc)
16.1mOhm @ 10A, 10V
2.4V @ 250µA
20nC @ 10V
795pF @ 35V, 765pF @ 35V
4.3W (Ta), 33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (3.3x3.3)
SQ1902AEL-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 20V 0.78A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 780mA (Tc)
  • Rds On (Max) @ Id, Vgs: 415mOhm @ 660mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
  • Power - Max: 430mW
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SC-70-6 Dual
  • Supplier Device Package: PowerPAK® SC-70-6 Dual
package: -
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-
20V
780mA (Tc)
415mOhm @ 660mA, 4.5V
1.5V @ 250µA
1.2nC @ 4.5V
75pF @ 10V
430mW
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
SQS944ENW-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 6A PWRPAK1212

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 1.25A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 25V
  • Power - Max: 27.8W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: PowerPAK® 1212-8W Dual
  • Supplier Device Package: PowerPAK® 1212-8W Dual
package: -
Request a Quote
-
40V
6A (Tc)
25mOhm @ 1.25A, 10V
2.5V @ 250µA
10nC @ 10V
615pF @ 25V
27.8W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerPAK® 1212-8W Dual
PowerPAK® 1212-8W Dual
SIA907EDJ-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V SMD

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
SQ4917EY-T1_BE3
Vishay Siliconix

MOSFET 2P-CH 60V 8A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
  • Power - Max: 5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Voorraad66.990
-
60V
8A (Tc)
48mOhm @ 4.3A, 10V
2.5V @ 250µA
65nC @ 10V
1910pF @ 30V
5W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SIZ200DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 22A 8POWERPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V
  • Power - Max: 4.3W (Ta), 33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (3.3x3.3)
package: -
Request a Quote
-
30V
22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
2.4V @ 250µA
28nC @ 10V, 30nC @ 10V
1510pF @ 15V, 1600pF @ 15V
4.3W (Ta), 33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (3.3x3.3)
SQ3585EV-T1_GE3
Vishay Siliconix

MOSFET N/P-CH 20V 3.57A 6TSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.67W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
package: -
Voorraad36.216
-
20V
3.57A (Tc), 2.5A (Tc)
77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
1.5V @ 250µA
2.5nC @ 4.5V, 3.5nC @ 4.5V
-
1.67W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
SQJ208EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 20A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V, 3900pF @ 25V
  • Power - Max: 27W (Tc), 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
package: -
Request a Quote
-
40V
20A (Tc), 60A (Tc)
9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V
2.3V @ 250µA, 2.4V @ 250µA
33nC @ 10V, 75nC @ 10V
1700pF @ 25V, 3900pF @ 25V
27W (Tc), 48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual Asymmetric
SQ4949EY-T1_BE3
Vishay Siliconix

MOSFET 2P-CH 30V 7.5A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
  • Power - Max: 3.3W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Voorraad7.425
-
30V
7.5A (Tc)
35mOhm @ 5.9A, 10V
2.5V @ 250µA
30nC @ 10V
1020pF @ 25V
3.3W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SQ4946AEY-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 60V 7A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
  • Power - Max: 4W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Request a Quote
-
60V
7A (Tc)
40mOhm @ 4.5A, 10V
2.5V @ 250µA
18nC @ 10V
750pF @ 25V
4W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SQJ740EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 123A PPAK SO-8L

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3143pF @ 25V
  • Power - Max: 93W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8L Dual BWL
package: -
Request a Quote
-
40V
123A (Tc)
3.4mOhm @ 7A, 10V
3.5V @ 250µA
56nC @ 10V
3143pF @ 25V
93W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8L Dual BWL
SQ4949EY-T1_GE3
Vishay Siliconix

MOSFET 2P-CH 30V 7.5A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
  • Power - Max: 3.3W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Voorraad138.447
-
30V
7.5A (Tc)
35mOhm @ 5.9A, 10V
2.5V @ 250µA
30nC @ 10V
1020pF @ 25V
3.3W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SQ1912AEEH-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 20V 0.8A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
package: -
Voorraad23.124
-
20V
800mA (Tc)
280mOhm @ 1.2A, 4.5V
1.5V @ 250µA
1.25nC @ 4.5V
27pF @ 10V
1.5W
-55°C ~ 175°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
SIZ340ADT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 15.7A 8PWR33

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V, 27.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 1290pF @ 15V
  • Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-Power33 (3x3)
package: -
Voorraad49.455
-
30V
15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)
9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V
2.4V @ 250µA
12.2nC @ 10V, 27.9nC @ 10V
580pF @ 15V, 1290pF @ 15V
3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-Power33 (3x3)
SIZ270DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 100V 7.1A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
  • Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V
  • Power - Max: 4.3W (Ta), 33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (3.3x3.3)
package: -
Voorraad34.020
-
100V
7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
2.4V @ 250µA
27nC @ 10V
860pF @ 50V, 845pF @ 50V
4.3W (Ta), 33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (3.3x3.3)
SQJ956EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 23A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Rds On (Max) @ Id, Vgs: 26.7mOhm @ 5.2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 30V
  • Power - Max: 34W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
package: -
Voorraad27.003
-
60V
23A (Tc)
26.7mOhm @ 5.2A, 10V
2.5V @ 250µA
30nC @ 10V
1395pF @ 30V
34W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SQJQ960EL-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 63A PPAK8X8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
  • Power - Max: 71W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 8 x 8 Dual
  • Supplier Device Package: PowerPAK® 8 x 8 Dual
package: -
Voorraad12.630
-
60V
63A (Tc)
9mOhm @ 10A, 10V
2.5V @ 250µA
24nC @ 10V
1950pF @ 25V
71W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8 Dual
PowerPAK® 8 x 8 Dual
SQ4920EY-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
  • Power - Max: 4.4W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Voorraad6.447
-
30V
8A (Tc)
14.5mOhm @ 6A, 10V
2.5V @ 250µA
30nC @ 10V
1465pF @ 15V
4.4W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SQJB40EP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Power - Max: 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8
  • Supplier Device Package: PowerPAK® SO-8
package: -
Voorraad27.000
-
40V
30A (Tc)
8mOhm @ 8A, 10V
2.5V @ 250µA
35nC @ 10V
1900pF @ 25V
34W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIZ980DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 20A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V
  • Power - Max: 20W, 66W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
package: -
Voorraad21.444
-
30V
20A (Tc), 60A (Tc)
6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V
2.2V @ 250µA
8.1nC @ 4.5V, 35nC @ 4.5V
930pF @ 15V, 4600pF @ 15V
20W, 66W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)
SQJ910AEP-T2_GE3
Vishay Siliconix

MOSFET 2N-CH 30V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
package: -
Request a Quote
-
30V
30A (Tc)
7mOhm @ 12A, 10V
2.5V @ 250µA
39nC @ 10V
1869pF @ 15V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SI7252ADP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 100V 9.3A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
  • Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
  • Power - Max: 3.6W (Ta), 33.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
package: -
Voorraad35.154
-
100V
9.3A (Ta), 28.7A (Tc)
18.6mOhm @ 10A, 10V
4V @ 250µA
26.5nC @ 10V
1266pF @ 50V
3.6W (Ta), 33.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SIZF918DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 23A 8POWERPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 2650pF @ 15V
  • Power - Max: 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
package: -
Voorraad18.000
-
30V
23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)
4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
2.4V @ 250µA, 2.3V @ 250µA
22nC @ 10V, 56nC @ 10V
1060pF @ 15V, 2650pF @ 15V
3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)