Toshiba Semiconductor and Storage Producten

TK10A60W,S4VX

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 9.7A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.7V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V
• Vgs (Max): ±30V
• FET Feature: Super Junction
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

package: TO-220-3 Full Pack

TK12A60D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 12A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

package: TO-220-3 Full Pack

TK31V60W5,LVQ

Toshiba Semiconductor and Storage

MOSFET N -CH 600V 30.8A DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
• Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 240W (Tc)
• Rds On (Max) @ Id, Vgs: 109 mOhm @ 15.4A, 10V
• Operating Temperature: 150°C (TA)
• Mounting Type: Surface Mount
• Supplier Device Package: 4-DFN-EP (8x8)
• Package / Case: 4-VSFN Exposed Pad

package: 4-VSFN Exposed Pad

2SA1832-GR,LF

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SSM

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 80MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

package: SC-75, SOT-416

2SC4116-GR,LF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A USM

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 80MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

package: SC-70, SOT-323

RN2908(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

package: 6-TSSOP, SC-88, SOT-363

1SV239TPH3F

Toshiba Semiconductor and Storage

DIODE VARACTOR 15V USC

• Capacitance @ Vr, F: 2pF @ 10V, 1MHz
• Capacitance Ratio: 2.4
• Capacitance Ratio Condition: C2/C10
• Voltage - Peak Reverse (Max): 15V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: USC

package: SC-76, SOD-323

TH58NYG3S0HBAI6

Toshiba Semiconductor and Storage

IC EEPROM 8GBIT 25NS 67VFBGA

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM - NAND
• Memory Size: 8Gb (1G x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 67-VFBGA
• Supplier Device Package: 67-VFBGA (6.5x8)

package: 67-VFBGA

TC74LCX157FTELM

Toshiba Semiconductor and Storage

IC MULTIPLEXER QUAD 2-CH 16TSSOP

• Type: Multiplexer
• Circuit: 4 x 2:1
• Independent Circuits: 1
• Current - Output High, Low: 24mA, 24mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

package: 16-TSSOP (0.173", 4.40mm Width)

TC4001BF(EL,N,F)

Toshiba Semiconductor and Storage

IC GATE NOR 4CH 2-INP 14SOP

• Logic Type: NOR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 3 V ~ 18 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 3.4mA, 3.4mA
• Logic Level - Low: 1.5 V ~ 4 V
• Logic Level - High: 3.5 V ~ 11 V
• Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SOP
• Package / Case: 14-SOIC (0.209", 5.30mm Width)

package: 14-SOIC (0.209", 5.30mm Width)

TC75S56F,LF

Toshiba Semiconductor and Storage

IC C0MP GP CMOS PUSH-PULL SMV

• Type: General Purpose
• Number of Elements: 1
• Output Type: Push-Pull
• Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
• Voltage - Input Offset (Max): 1mV @ 5V
• Current - Input Bias (Max): 1pA @ 5V
• Current - Output (Typ): 25mA
• Current - Quiescent (Max): 22µA
• CMRR, PSRR (Typ): -
• Propagation Delay (Max): 680ns
• Hysteresis: -
• Operating Temperature: -40°C ~ 85°C
• Package / Case: SC-74A, SOT-753
• Mounting Type: Surface Mount
• Supplier Device Package: SMV

package: SC-74A, SOT-753

TODX2350A(F)

Toshiba Semiconductor and Storage

TXRX MOD OPTICAL 10MBPS 650NM

• Data Rate: 10Mbps
• Wavelength: 650nm
• Applications: General Purpose
• Voltage - Supply: 4.75 V ~ 5.25 V
• Connector Type: JIS F07
• Mounting Type: Through Hole

package: -

TC35667FSG-006(EL)

Toshiba Semiconductor and Storage

BLUETOOTH V4.1 LOW ENERGY STANDA

• Type: -
• RF Family/Standard: -
• Protocol: -
• Modulation: -
• Frequency: -
• Data Rate (Max): -
• Power - Output: -
• Sensitivity: -
• Memory Size: -
• Serial Interfaces: -
• GPIO: -
• Voltage - Supply: -
• Current - Receiving: -
• Current - Transmitting: -
• Operating Temperature: -
• Package / Case: 40-VFQFN Exposed Pad

package: 40-VFQFN Exposed Pad

TLP3542(F)

Toshiba Semiconductor and Storage

PHOTOCOUPLER PHOTORELAY 6-DIP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 100 mOhm
• Load Current: 2.5A
• Voltage - Input: 1.33VDC
• Voltage - Load: 0 ~ 60 V
• Mounting Type: Through Hole
• Termination Style: PC Pin
• Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
• Supplier Device Package: 6-DIP (Cut), 5 Lead
• Relay Type: Relay

package: 6-DIP (0.300", 7.62mm), 5 Leads

TLP2161(TP,F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV 2CH PUSH PULL 8SO

• Number of Channels: 2
• Inputs - Side 1/Side 2: 2/0
• Voltage - Isolation: 2500Vrms
• Common Mode Transient Immunity (Min): 20kV/µs
• Input Type: DC
• Output Type: Push-Pull, Totem Pole
• Current - Output / Channel: 10mA
• Data Rate: 15MBd
• Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
• Rise / Fall Time (Typ): 3ns, 3ns
• Voltage - Forward (Vf) (Typ): 1.5V
• Current - DC Forward (If) (Max): 10mA
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

package: 8-SOIC (0.154", 3.90mm Width)

TBD62381AFWG,EL

Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

• Switch Type: General Purpose
• Number of Outputs: 8
• Ratio - Input:Output: 8:8
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: -
• Voltage - Load: 0 ~ 50 V
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Current - Output (Max): 500mA
• Rds On (Typ): 1 Ohm
• Input Type: Inverting
• Features: -
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 18-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 18-SOP

package: 18-SOIC (0.295", 7.50mm Width)

TLP7920(D4-A,F

Toshiba Semiconductor and Storage

ISO AMP ANALOG OUTPUT GAIN SAFE

• Amplifier Type: Isolation
• Number of Circuits: 1
• Output Type: Differential
• Slew Rate: -
• Gain Bandwidth Product: -
• -3db Bandwidth: 230kHz
• Current - Input Bias: 5.5nA
• Voltage - Input Offset: 730µV
• Current - Supply: 12mA
• Current - Output / Channel: -
• Voltage - Supply, Single/Dual (±): 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

package: 8-DIP (0.300", 7.62mm)

7UL1G126FS,LF

Toshiba Semiconductor and Storage

X34 L-MOS LVP SERIES BUFFER 3-ST

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: 3-State
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 0.9V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SOT-953
• Supplier Device Package: fSV

package: SOT-953

TCR2LN095,LF

Toshiba Semiconductor and Storage

200MA LDO VOUT=0.95V DROPOUT=200

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.95V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.46V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 2µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

package: 4-XFDFN Exposed Pad

TCR2LF13,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT1.3V DROPOUT220MV

• Output Configuration: -
• Output Type: -
• Number of Regulators: -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: -
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

CMZ20-TE12L-Q-M

Toshiba Semiconductor and Storage

DIODE ZENER 20V 2W MFLAT

• Voltage - Zener (Nom) (Vz): 20 V
• Tolerance: ±10%
• Power - Max: 2 W
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 14 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: M-FLAT (2.4x3.8)

package: -

RN2104-LF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 47 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

package: -

TCR3UF18B-LM-CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 300MA SMV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.464V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 680 nA
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

package: -

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RN2905FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

package: -

ULN2004AFWG-N-E

Toshiba Semiconductor and Storage

IC PWR RELAY 7NPN 1:1 16SOL

• Transistor Type: 7 NPN Darlington
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
• Power - Max: 1.25W
• Frequency - Transition: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOL

package: -

Request a Quote

TCKE800NA-RF

Toshiba Semiconductor and Storage

IC ELECTRONIC FUSE 10WSON

• Function: Electronic Fuse
• Sensing Method: -
• Accuracy: -
• Voltage - Input: 4.4V ~ 18V
• Current - Output: 5A
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 10-WFDFN Exposed Pad
• Supplier Device Package: 10-WSONB (3x3)

package: -

CRY62-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE ZENER 6.2V 700MW SFLAT

• Voltage - Zener (Nom) (Vz): 6.2 V
• Tolerance: ±9.68%
• Power - Max: 700 mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 3 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: S-FLAT (1.6x3.5)

package: -

TK55S10N1-LXHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 55A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 157W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

package: -